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For power semiconductor devices (such as BJT, MOSFET, thyristor or IGBT), the safe operating area (SOA) is defined as the voltage and current conditions over which the device can be expected to operate without self-damage. [1] Illustration of safe operating area of a bipolar power transistor.
Listed are many semiconductor scale examples for various metal–oxide–semiconductor field-effect transistor (MOSFET, or MOS transistor) semiconductor manufacturing process nodes. Timeline of MOSFET demonstrations
For several years, the Semiconductor Industry Association (SIA) gave this responsibility of coordination to the United States, which led to the creation of an American style roadmap, the National Technology Roadmap for Semiconductors (NTRS). [5] The first semiconductor roadmap, published by the SIA in 1993.
In 2003, a research team at NEC fabricated the first MOSFETs with a channel length of 3 nm, using the PMOS and NMOS processes. [20] [21] In 2006, a team from the Korea Advanced Institute of Science and Technology (KAIST) and the National Nano Fab Center, developed a 3 nm width multi-gate MOSFET, the world's smallest nanoelectronic device, based on gate-all-around technology.
Cover of the comic book "THE SHMOO" The plot takes its name from the Shmoo, a fictional species created by Al Capp in the cartoon Li'l Abner.These small, blob-like creatures have shapes similar to the "working" volumes that would be enclosed by shmoo plots drawn against three independent variables (such as voltage, temperature, and response speed).
Semiconductor fabrication techniques continued to improve throughout. The Micralign, which had "created the modern IC industry", was obsolete by the early 1980s. They were replaced by the new steppers , which used high magnifications and extremely powerful light sources to allow a large mask to be copied onto the wafer at ever-smaller sizes.
High-temperature operating life (HTOL) is a reliability test applied to integrated circuits (ICs) to determine their intrinsic reliability. This test stresses the IC at an elevated temperature, high voltage and dynamic operation for a predefined period of time.
Generate a formal report to convey the information produced; The design is broken down into the appropriate functional sections. A mathematical model of the circuit is developed and the effects of various part/system tolerances are applied. The circuit's EVA and RSS results are determined for beginning-of-life and end-of-life states.