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  2. Static random-access memory - Wikipedia

    en.wikipedia.org/wiki/Static_random-access_memory

    Static random-access memory (static RAM or SRAM) is a type of random-access memory (RAM) that uses latching circuitry (flip-flop) to store each bit. SRAM is volatile memory; data is lost when power is removed. The static qualifier differentiates SRAM from dynamic random-access memory (DRAM):

  3. Flash memory - Wikipedia

    en.wikipedia.org/wiki/Flash_memory

    Common flash devices such as USB flash drives and memory cards provide only a block-level interface, or flash translation layer (FTL), which writes to a different cell each time to wear-level the device. This prevents incremental writing within a block; however, it does help the device from being prematurely worn out by intensive write patterns.

  4. Random-access memory - Wikipedia

    en.wikipedia.org/wiki/Random-access_memory

    In general, the term RAM refers solely to solid-state memory devices (either DRAM or SRAM), and more specifically the main memory in most computers. In optical storage, the term DVD-RAM is somewhat of a misnomer since, it is not random access; it behaves much like a hard disc drive if somewhat slower.

  5. Semiconductor memory - Wikipedia

    en.wikipedia.org/wiki/Semiconductor_memory

    Flash memory – In this type the writing process is intermediate in speed between EEPROMS and RAM memory; it can be written to, but not fast enough to serve as main memory. It is often used as a semiconductor version of a hard disk , to store files.

  6. Magnetoresistive RAM - Wikipedia

    en.wikipedia.org/wiki/Magnetoresistive_RAM

    A memory device is built from a grid of such "cells". The simplest method of reading is accomplished by measuring the electrical resistance of the cell. A particular cell is (typically) selected by powering an associated transistor that switches current from a supply line through the cell to ground.

  7. Ferroelectric RAM - Wikipedia

    en.wikipedia.org/wiki/Ferroelectric_RAM

    Flash memory is produced using semiconductor linewidths of 30 nm at Samsung (2007) while FeRAMs are produced in linewidths of 350 nm at Fujitsu and 130 nm at Texas Instruments (2007). Flash memory cells can store multiple bits per cell (currently 4 in the highest density NAND flash devices), and the number of bits per flash cell is projected to ...

  8. Memory cell (computing) - Wikipedia

    en.wikipedia.org/wiki/Memory_cell_(computing)

    Computer memory used in most contemporary computer systems is built mainly out of DRAM cells; since the layout is much smaller than SRAM, it can be more densely packed yielding cheaper memory with greater capacity. Since the DRAM memory cell stores its value as the charge of a capacitor, and there are current leakage issues, its value must be ...

  9. AVR microcontrollers - Wikipedia

    en.wikipedia.org/wiki/AVR_microcontrollers

    The AVRs have 32 single-byte registers and are classified as 8-bit RISC devices. Flash, EEPROM, and SRAM are all integrated onto a single chip, removing the need for external memory in most applications. Some devices have a parallel external bus option to allow adding additional data memory or memory-mapped devices.

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