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A CMOS transistor NAND element. V dd denotes positive voltage.. In CMOS logic, if both of the A and B inputs are high, then both the NMOS transistors (bottom half of the diagram) will conduct, neither of the PMOS transistors (top half) will conduct, and a conductive path will be established between the output and Vss (ground), bringing the output low.
Diagram of the NAND gates in a CMOS type 4011 integrated circuit. NAND gates are basic logic gates, and as such they are recognised in TTL and CMOS ICs. The standard, 4000 series, CMOS IC is the 4011, which includes four independent, two-input, NAND gates. These devices are available from many semiconductor manufacturers.
2006-09-07 23:46 Jamesm76 294×587×0 (11839 bytes) I am the author and I release this to the public domain.; 2006-09-07 23:27 Jamesm76 294×587×0 (11827 bytes) SVG drawing of a CMOS NAND gate replacing the older PNG version I had previously uploaded ("CMOS NAND Layout.png").
The physical layout of a CMOS NOR. In CMOS, NOR gates are less efficient than NAND gates. This is due to the faster charge mobility in n-MOSFETs compared to p-MOSFETs, so that the parallel connection of two p-MOSFETs realised in the NAND gate is more favourable than their series connection in the NOR gate.
The AND gate is a basic digital logic gate that implements the logical conjunction (∧) from mathematical logic – AND gates behave according to their truth table. A HIGH output (1) results only if all the inputs to the AND gate are HIGH (1). If all of the inputs to the AND gate are not HIGH, a LOW (0) is outputted.
An NMOS NAND gate with saturated enhancement-mode load device. The enhancement device can also be used with a more positive gate bias in a non-saturated configuration, which is more power efficient but requires a high gate voltage and a longer transistor. Neither is as power efficient or compact as a depletion load.
In semiconductor design, standard-cell methodology is a method of designing application-specific integrated circuits (ASICs) with mostly digital-logic features. Standard-cell methodology is an example of design abstraction, whereby a low-level very-large-scale integration layout is encapsulated into an abstract logic representation (such as a NAND gate).
Shown on the right is a circuit diagram of a NAND gate in CMOS logic. If both of the A and B inputs are high, then both the NMOS transistors (bottom half of the diagram) will conduct, neither of the PMOS transistors (top half) will conduct, and a conductive path will be established between the output and V ss (ground), bringing the output low.