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A laser diode (LD, also injection laser diode or ILD or semiconductor laser or diode laser) is a semiconductor device similar to a light-emitting diode in which a diode pumped directly with electrical current can create lasing conditions at the diode's junction. [1]: 3
In semiconductor laser theory, the optical gain is produced in a semiconductor material. The choice of material depends on the desired wavelength and properties such as modulation speed. It may be a bulk semiconductor, but more often a quantum heterostructure. Pumping may be electrically or optically . All these structures can be described in a ...
Conventional semiconductor laser diodes generate light by a single photon being emitted when a high energy electron in the conduction band recombines with a hole in the valence band. The energy of the photon and hence the emission wavelength of laser diodes is therefore determined by the band gap of the material system used.
There are many types and categories of tunable lasers. They exist in the gas, liquid, and solid states. Among the types of tunable lasers are excimer lasers, gas lasers (such as CO 2 and He-Ne lasers), dye lasers (liquid and solid state), transition-metal solid-state lasers, semiconductor crystal and diode lasers, and free-electron lasers. [1]
A quantum-well laser is a laser diode in which the active region of the device is so narrow that quantum confinement occurs. Laser diodes are formed in compound semiconductor materials that (quite unlike silicon ) are able to emit light efficiently.
Diagram of a simple VCSEL structure. The vertical-cavity surface-emitting laser (VCSEL / ˈ v ɪ k s əl /) is a type of semiconductor laser diode with laser beam emission perpendicular from the top surface, contrary to conventional edge-emitting semiconductor lasers (also called in-plane lasers) which emit from surfaces formed by cleaving the individual chip out of a wafer.
A distributed-feedback laser (DFB) is a type of laser diode, quantum-cascade laser or optical-fiber laser where the active region of the device contains a periodically structured element or diffraction grating. The structure builds a one-dimensional interference grating (Bragg scattering), and the grating provides optical feedback for the laser.
This allows quantum dot lasers to be fabricated to operate at wavelengths previously not possible using semiconductor laser technology. [1] One challenge in the further advances with quantum dot lasers is the presence of multicarrier Auger processes which increases the nonradiative rate upon population inversion. [ 2 ]
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