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The first practical form of random-access memory was the Williams tube. It stored data as electrically charged spots on the face of a cathode-ray tube. Since the electron beam of the CRT could read and write the spots on the tube in any order, memory was random access.
Electrochemical Random-Access Memory (ECRAM) is a type of non-volatile memory (NVM) with multiple levels per cell (MLC) designed for deep learning analog acceleration. [1] [2] [3] An ECRAM cell is a three-terminal device composed of a conductive channel, an insulating electrolyte, an ionic reservoir, and metal contacts. The resistance of the ...
Resistive random-access memory (ReRAM or RRAM) is a type of non-volatile (NV) random-access (RAM) computer memory that works by changing the resistance across a dielectric solid-state material, often referred to as a memristor. One major advantage of ReRAM over other NVRAM technologies is the ability to scale below 10 nm.
Subsequent rapid cooling then sends the melted region back through the glass transition. Conversely, a lower-intensity heat pulse of longer duration will crystallize an amorphous region. Attempts to induce the glassy–crystal transformation of chalcogenides by electrical means form the basis of phase-change random-access memory (PC-RAM).
They can store more information and transmit data more quickly than the older technology, called DRAM (dynamic random access memory). HBM chips are commonly used in graphic cards, high-performance ...
VRAM (Video random access memory) – An older type of dual-ported memory once used for the frame buffers of video adapters (video cards). SDRAM (Synchronous dynamic random-access memory) – This added circuitry to the DRAM chip which synchronizes all operations with a clock signal added to the computer's memory bus.
The one advantage that distinguishes it from other next generation non-volatile memory like magnetic random access memory (MRAM) is the unique scaling advantage of having better performance with smaller sizes. The limit to which phase-change memory can be scaled is hence limited by lithography at least until 45 nm.
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