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Resistive random-access memory (ReRAM or RRAM) is a type of non-volatile (NV) random-access (RAM) computer memory that works by changing the resistance across a dielectric solid-state material, often referred to as a memristor. One major advantage of ReRAM over other NVRAM technologies is the ability to scale below 10 nm.
Pages in category "Types of RAM" The following 22 pages are in this category, out of 22 total. ... Resistive random-access memory; S. ST-MRAM; Static random-access ...
Magnetoresistive random-access memory (MRAM) is a type of non-volatile random-access memory which stores data in magnetic domains. [1] Developed in the mid-1980s, proponents have argued that magnetoresistive RAM will eventually surpass competing technologies to become a dominant or even universal memory. [2]
Nano-RAM is a proprietary computer memory technology from the company Nantero. It is a type of nonvolatile random-access memory based on the position of carbon nanotubes deposited on a chip-like substrate. In theory, the small size of the nanotubes allows for very high density memories.
The two main types of volatile random-access semiconductor memory are static random-access memory (SRAM) and dynamic random-access memory (DRAM). Non-volatile RAM has also been developed [ 3 ] and other types of non-volatile memories allow random access for read operations, but either do not allow write operations or have other kinds of ...
Ferroelectric RAM (FeRAM, F-RAM or FRAM) is a random-access memory similar in construction to DRAM but using a ferroelectric layer instead of a dielectric layer to achieve non-volatility. FeRAM is one of a growing number of alternative non-volatile random-access memory technologies that offer the same functionality as flash memory.
They can store more information and transmit data more quickly than the older technology, called DRAM (dynamic random access memory). HBM chips are commonly used in graphic cards, high-performance ...
Racetrack memory; RAM limit; RAM parity; Random access; Random-access memory; Read–modify–write; Read-mostly memory; Read-only memory; Read–write memory; Recovery Toolbox; Redundant array of independent memory; Reflective memory; Regenerative capacitor memory; Registered memory; Remote direct memory access; Replay Protected Memory Block ...
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