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The Type 575 Transistor-Curve Tracer displays the dynamic characteristic curves of both NPN and PNP transistors on the screen of a 5-inch cathode-ray tube. Several different transistor characteristic curves may be displayed, including the collector family in the common-base and common emitter configuration. In addition to the transistor ...
The 2N3906 is a commonly used PNP bipolar junction transistor intended for general purpose low-power amplifying or switching applications. [1] [2] It is designed for low electric current and power and medium voltage, and can operate at moderately high speeds. It is complementary to the 2N3904 NPN transistor. [3]
The 2N170 was priced slightly higher than the 2N107. The 2N170 was a fallout from the 2N167, 2N168 and 2N169 transistor lines. In the 1950s, General Electric distinguished their PNP and NPN transistors by their case styles. PNP transistors had the round, black "top hat" style body, while NPN transistors had oval, black "top hats".
All types have a maximum collector current of 100 mA, except that the original Philips tentative data dated 4.4.1966 specified a maximum collector current of 100 mA peak (I CM) for the BC107/8/9, and Telefunken originally specified a maximum collector current of 50 mA for the BC109, but since at least 1973 all have revised collector currents of 100 mA average or 200 mA peak, except that the ...
A typical use of these transistors is as a switch for moderate voltages and currents, including as drivers for small lamps, motors, and relays. [1] In switching circuits, these FETs can be used much like bipolar junction transistors, but have some advantages: high input impedance of the insulated gate means almost no gate current is required
The BC548 is a part of a family of NPN and PNP epitaxial silicon transistors that originated with the metal-cased BC108 family of transistors.The BC548 is the modern plastic-packaged BC108; [6] the BC548 article at the Radiomuseum website [7] describes the BC548 as a successor to the BC238 and differing from the BC108 in only the shape of the package.
Tetrode transistor – high-speed variant of grown-junction transistor [18] or alloy junction transistor [19] with two connections to base. Surface-barrier transistor – high-speed metal-barrier junction transistor. Developed at Philco [20] in 1953. [21] Drift-field transistor – high-speed bipolar junction
Extreme temperature transistors include high-temperature transistors (above 150 °C (302 °F)) and low-temperature transistors (below −55 °C (−67 °F)). The high-temperature transistors that operate thermally stable up to 250 °C (482 °F) can be developed by a general strategy of blending interpenetrating semi-crystalline conjugated ...
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