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  2. DDR4 SDRAM - Wikipedia

    en.wikipedia.org/wiki/DDR4_SDRAM

    DDR4 memory is supplied in 288-pin dual in-line memory modules (DIMMs), similar in size to 240-pin DDR3 DIMMs. DDR4 RAM modules feature pins that are spaced more closely at 0.85 mm compared to the 1.0 mm spacing in DDR3, allowing for a higher pin density within the same standard DIMM length of 133.35 mm (5¼ inches).

  3. Phase-change memory - Wikipedia

    en.wikipedia.org/wiki/Phase-change_memory

    Phase-change memory (also known as PCM, PCME, PRAM, PCRAM, OUM (ovonic unified memory) and C-RAM or CRAM (chalcogenide RAM)) is a type of non-volatile random-access memory. PRAMs exploit the unique behaviour of chalcogenide glass .

  4. 3D XPoint - Wikipedia

    en.wikipedia.org/wiki/3D_XPoint

    Development of 3D XPoint began around 2012. [8] Intel and Micron had developed other non-volatile phase-change memory (PCM) technologies previously; [note 1] Mark Durcan of Micron said 3D XPoint architecture differs from previous offerings of PCM, and uses chalcogenide materials for both selector and storage parts of the memory cell that are faster and more stable than traditional PCM ...

  5. Magnetoresistive RAM - Wikipedia

    en.wikipedia.org/wiki/Magnetoresistive_RAM

    Possible practical application of the MRAM includes virtually every device that has some type of memory inside such as aerospace and military systems, digital cameras, notebooks, smart cards, mobile telephones, cellular base stations, personal computers, battery-backed SRAM replacement, datalogging specialty memories (black box solutions ...

  6. DDR SDRAM - Wikipedia

    en.wikipedia.org/wiki/DDR_SDRAM

    The DDR4 SDRAM is a high-speed dynamic random-access memory internally configured as 16 banks, 4 bank groups with 4 banks for each bank group for ×4/×8 and 8 banks, 2 bank groups with 4 banks for each bank group for ×16 DRAM. The DDR4 SDRAM uses an 8n prefetch architecture to achieve high-speed

  7. Synchronous dynamic random-access memory - Wikipedia

    en.wikipedia.org/wiki/Synchronous_dynamic_random...

    The DDR4 chips run at 1.2 V or less, [18] [19] compared to the 1.5 V of DDR3 chips, and have in excess of 2 billion data transfers per second. They were expected to be introduced at frequency rates of 2133 MHz, estimated to rise to a potential 4266 MHz [ 20 ] and lowered voltage of 1.05 V [ 21 ] by 2013.

  8. Static random-access memory - Wikipedia

    en.wikipedia.org/wiki/Static_random-access_memory

    LCDs can have SRAM in their LCD controllers. SRAM was used for the main memory of many early personal computers such as the ZX80, TRS-80 Model 100, and VIC-20. Some early memory cards in the late 1980s to early 1990s used SRAM as a storage medium, which required a lithium battery to keep the contents of the SRAM. [14] [15]

  9. Non-volatile memory - Wikipedia

    en.wikipedia.org/wiki/Non-volatile_memory

    Other examples of non-volatile memory include read-only memory (ROM), EPROM (erasable programmable ROM) and EEPROM (electrically erasable programmable ROM), ferroelectric RAM, most types of computer data storage devices (e.g. disk storage, hard disk drives, optical discs, floppy disks, and magnetic tape), and early computer storage methods such ...

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