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A simple circuit diagram showing the labels of an n–p–n bipolar transistor. A transistor can use a small signal applied between one pair of its terminals to control a much larger signal at another pair of terminals, a property called gain.
Cross-sectional view of a MOSFET type field-effect transistor, showing source, gate and drain terminals, and insulating oxide layer. The field-effect transistor (FET) is a type of transistor that uses an electric field to control the current through a semiconductor. It comes in two types: junction FET (JFET) and metal-oxide-semiconductor FET ...
The introduction of the transistor is often considered one of the most important inventions in history. [1] [2] Transistors are broadly classified into two categories: bipolar junction transistor (BJT) and field-effect transistor (FET). [3] The principle of a field-effect transistor was proposed by Julius Edgar Lilienfeld in 1925. [4]
Bipolar transistors have four distinct regions of operation, defined by BJT junction biases: [9] [10] Forward-active (or simply active) The base–emitter junction is forward biased and the base–collector junction is reverse biased. Most bipolar transistors are designed to afford the greatest common-emitter current gain, β F, in
In electronics, the metal–oxide–semiconductor field-effect transistor (MOSFET, MOS-FET, MOS FET, or MOS transistor) is a type of field-effect transistor (FET), most commonly fabricated by the controlled oxidation of silicon. It has an insulated gate, the voltage of which determines the conductivity of the device.
There are three types of unijunction transistor: The original unijunction transistor, or UJT, is a simple device that is essentially a bar of n-type semiconductor material into which p-type material has been diffused somewhere along its length, fixing the device parameter (the "intrinsic stand-off ratio"). The 2N2646 model is the most commonly ...
Darlington Transistor (NPN-type) In electronics, a Darlington configuration (commonly called as a Darlington pair) is a circuit consisting of two bipolar transistors with the emitter of one transistor connected to the base of the other, such that the current amplified by the first transistor is amplified further by the second one. [1]
A single-electron transistor (SET) is a sensitive electronic device based on the Coulomb blockade effect. In this device the electrons flow through a tunnel junction between source/drain to a quantum dot (conductive island). Moreover, the electrical potential of the island can be tuned by a third electrode, known as the gate, which is ...
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