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An alternative, which is used for voltage references that need to be highly stable over long periods of time, is to use a Zener diode with a temperature coefficient (TC) of +2 mV/°C (breakdown voltage 6.2–6.3 V) connected in series with a forward-biased silicon diode (or a transistor B–E junction) manufactured on the same chip. [4]
In electronics, the Zener effect (employed most notably in the appropriately named Zener diode) is a type of electrical breakdown, discovered by Clarence Melvin Zener. It occurs in a reverse biased p-n diode when the electric field enables tunneling of electrons from the valence to the conduction band of a semiconductor , leading to numerous ...
In the Zener diode, the concept of PIV is not applicable. A Zener diode contains a heavily doped p–n junction allowing electrons to tunnel from the valence band of the p-type material to the conduction band of the n-type material, such that the reverse voltage is "clamped" to a known value (called the Zener voltage), and avalanche does not ...
Electrically, these devices resemble Zener diodes, with the following major differences: They rely on gas ionization, rather than Zener breakdown; The unregulated supply voltage must be 15–20% above the nominal output voltage to ensure that the discharge starts; The output can be higher than nominal if the current through the tube is too low.
Since the forward voltage of a diode is small, this kind of voltage regulator is only suitable for low voltage regulated output. When higher voltage output is needed, a zener diode or series of zener diodes may be employed. Zener diode regulators make use of the zener diode's fixed reverse voltage, which can be quite large.
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Clarence Melvin Zener (December 1, 1905 – July 2, 1993) was the American physicist who in 1934 [1] was the first to describe the property concerning the breakdown of electrical insulators. These findings were later exploited by Bell Labs in the development of the Zener diode, which was duly named after him. [2]