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In electronics, a varicap diode, varactor diode, variable capacitance diode, variable reactance diode or tuning diode is a type of diode designed to exploit the voltage-dependent capacitance of a reverse-biased p–n junction.
The thickness of the depletion layer of a reverse-biased semiconductor diode varies with the DC voltage applied across the diode. Any diode exhibits this effect (including p/n junctions in transistors), but devices specifically sold as variable capacitance diodes (also called varactors or varicaps ) are designed with a large junction area and a ...
Any reverse-biased semiconductor diode displays a measure of voltage-dependent capacitance and can be used to change the frequency of an oscillator by varying a control voltage applied to the diode. Special-purpose variable-capacitance varactor diodes are available with well-characterized wide-ranging values of capacitance. A varactor is used ...
The classical varactor parametric oscillator consists of a semiconductor varactor diode connected to a resonant circuit or cavity resonator. It is driven by varying the diode's capacitance by applying a varying bias voltage. The circuit that varies the diode's capacitance is called the "pump" or "driver".
In electronics, a step recovery diode (SRD, snap-off diode or charge-storage diode or memory varactor [a]) is a semiconductor junction diode with the ability to generate extremely short pulses. It has a variety of uses in microwave (MHz to GHz range) electronics as pulse generator or parametric amplifier .
These techniques are used to create special-purpose diodes that perform many different functions. [8] For example, to electronically tune radio and TV receivers (varactor diodes), to generate radio-frequency oscillations (tunnel diodes, Gunn diodes, IMPATT diodes), and to produce light (light-emitting diodes).
When a small voltage is applied across the electrodes, only a tiny current flows, caused by reverse leakage through the diode junctions. When a large voltage is applied, the diode junction breaks down due to a combination of thermionic emission and electron tunneling, resulting in a large current flow. The result of this behavior is a nonlinear ...
The wide intrinsic region makes the PIN diode an inferior rectifier (one typical function of a diode), but it makes it suitable for attenuators, fast switches, photodetectors, and high-voltage power electronics applications. The PIN photodiode was invented by Jun-Ichi Nishizawa and his colleagues in 1950. It is a semiconductor device.