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Aluminium nitride (Al N) is a solid nitride of aluminium. It has a high thermal conductivity of up to 321 W/(m·K) [ 5 ] and is an electrical insulator. Its wurtzite phase (w-AlN) has a band gap of ~6 eV at room temperature and has a potential application in optoelectronics operating at deep ultraviolet frequencies.
Aluminium oxynitride (marketed under the name ALON by Surmet Corporation [3]) is a transparent ceramic composed of aluminium, oxygen and nitrogen. Aluminium oxynitride is optically transparent (≥80% for 2 mm thickness) in the near-ultraviolet , visible, and mid-wave- infrared regions of the electromagnetic spectrum.
Four pnictides, aluminium nitride (AlN), aluminium phosphide (AlP), aluminium arsenide (AlAs), and aluminium antimonide (AlSb), are known. They are all III-V semiconductors isoelectronic to silicon and germanium, all of which but AlN have the zinc blende structure. All four can be made by high-temperature (and possibly high-pressure) direct ...
formula properties reference aluminium oxynitride ALON transparent, tough Lithium silicon oxynitride LiSiON Pca2 1 Wurtzite structure a=5.1986 b=6.3893 c=4.7398 [3] SiAlON SiAlNO (Li,Mg,Y,Le,Ce,Eu) Silicon oxynitride sodium silicon oxynitride NaSiON white Wurtzite structure [3] Sinoite Si 2 N 2 O mineral Li 14 Cr 2 N 8 O P 3 a=5.799 c=8.263 [3 ...
Aluminium (or aluminum in North American English) is a chemical element; it has symbol Al and atomic number 13. Aluminium has a density lower than that of other common metals, about one-third that of steel. It has a great affinity towards oxygen, forming a protective layer of oxide on the surface when exposed to air.
The fundamental reasons why TiAlN coatings outperform pure Titanium nitride (TiN) coatings are considered to be: Increased oxidation resistance at elevated temperatures due to the formation of a protective aluminium-oxide layer at the surface; Increased hardness in the freshly deposited films due to micro-structure changes and solid solution ...
Aluminium gallium nitride (AlGaN) is a semiconductor material. It is any alloy of aluminium nitride and gallium nitride . The bandgap of Al x Ga 1−x N can be tailored from 4.3eV (xAl=0) to 6.2eV (xAl=1).
Solar cells (potential). The use of aluminium gallium indium phosphide with high aluminium content, in a five junction structure, can lead to solar cells with maximum theoretical efficiencies above 40%. [1] AlGaInP is frequently used in LEDs for lighting systems, along with indium gallium nitride (InGaN). [citation needed]