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Development of 3D XPoint began around 2012. [8] Intel and Micron had developed other non-volatile phase-change memory (PCM) technologies previously; [note 1] Mark Durcan of Micron said 3D XPoint architecture differs from previous offerings of PCM, and uses chalcogenide materials for both selector and storage parts of the memory cell that are faster and more stable than traditional PCM ...
The vast majority of laptops on the market are manufactured by a small handful of Taiwan-based original design manufacturers (ODM), although their production bases are located mostly in mainland China. Quanta Computer pioneered the contract manufacturing of laptops in 1988. By 1990, Taiwanese companies manufactured 11% of the world's laptops.
DDR4 memory is supplied in 288-pin dual in-line memory modules (DIMMs), similar in size to 240-pin DDR3 DIMMs. DDR4 RAM modules feature pins that are spaced more closely at 0.85 mm compared to the 1.0 mm spacing in DDR3, allowing for a higher pin density within the same standard DIMM length of 133.35 mm (5¼ inches).
Such systems may constitute personal computers (including desktop computers, portable computers, laptops, all-in-ones, and more), mainframe computers, minicomputers, servers, and workstations, among other classes of computing. The following is a list of notable manufacturers and
Phase-change memory (also known as PCM, PCME, PRAM, PCRAM, OUM (ovonic unified memory) and C-RAM or CRAM (chalcogenide RAM)) is a type of non-volatile random-access memory. PRAMs exploit the unique behaviour of chalcogenide glass .
There are a number of other companies (AMD, Microchip, Altera, etc.) making specialized chipsets as part of other ICs, and they are not often found in PC hardware (laptop, desktop or server). There are also a number of now defunct companies (like 3com, DEC, SGI) that produced network related chipsets for us in general computers.
February — Toshiba and NEC announced a 16 Mbit MRAM chip with a new "power-forking" design. It achieves a transfer rate of 200 Mbit/s, with a 34 ns cycle time, the best performance of any MRAM chip. It also boasts the smallest physical size in its class — 78.5 square millimeters — and the low voltage requirement of 1.8 volts. [33]
The DDR4 SDRAM is a high-speed dynamic random-access memory internally configured as 16 banks, 4 bank groups with 4 banks for each bank group for ×4/×8 and 8 banks, 2 bank groups with 4 banks for each bank group for ×16 DRAM. The DDR4 SDRAM uses an 8n prefetch architecture to achieve high-speed