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Resistive random-access memory (ReRAM or RRAM) is a type of non-volatile (NV) random-access (RAM) computer memory that works by changing the resistance across a dielectric solid-state material, often referred to as a memristor. One major advantage of ReRAM over other NVRAM technologies is the ability to scale below 10 nm.
December — Freescale Semiconductor Inc. demonstrates an MRAM that uses magnesium oxide, rather than an aluminum oxide, allowing for a thinner insulating tunnel barrier and improved bit resistance during the write cycle, thereby reducing the required write current. Spintec laboratory gives Crocus Technology exclusive license on its patents. 2006
Mask ROM consists of a grid of word lines (the address input) and bit lines (the data output), selectively joined with transistor switches, and can represent an arbitrary look-up table with a regular physical layout and predictable propagation delay. Mask ROM is programmed with photomasks in photolithography during semiconductor manufacturing.
Other examples of non-volatile memory include read-only memory (ROM), EPROM (erasable programmable ROM) and EEPROM (electrically erasable programmable ROM), ferroelectric RAM, most types of computer data storage devices (e.g. disk storage, hard disk drives, optical discs, floppy disks, and magnetic tape), and early computer storage methods such ...
Non-volatile random-access memory (NVRAM) is random-access memory that retains data without applied power. This is in contrast to dynamic random-access memory (DRAM) and static random-access memory (SRAM), which both maintain data only for as long as power is applied, or forms of sequential-access memory such as magnetic tape, which cannot be randomly accessed but which retains data ...
The Ioniq 6 hasn't been tested for rollover resistance by NHTSA, but it earned a four-star front safety rating and a five-star side-impact rating in government tests. Like most EVs, the Hyundai ...
BMW recalled certain 2023-2024 X1, X5, X6, X7, XM, 530i, i5, 740i, 760i, i7, and 750e vehicles.. The NHTSA report said that the integrated brake system may malfunction and result in a loss of ...
Probably the biggest challenge for phase-change memory is its long-term resistance and threshold voltage drift. [34] The resistance of the amorphous state slowly increases according to a power law (~t 0.1). This severely limits the ability for multilevel operation, since a lower intermediate state would be confused with a higher intermediate ...