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In a given technology node, such as the 90-nm CMOS process, the threshold voltage depends on the choice of oxide and on oxide thickness. Using the body formulas above, V T N {\displaystyle V_{TN}} is directly proportional to γ {\displaystyle \gamma } , and t O X {\displaystyle t_{OX}} , which is the parameter for oxide thickness.
Cross-sectional view of a MOSFET type field-effect transistor, showing source, gate and drain terminals, and insulating oxide layer. The field-effect transistor (FET) is a type of transistor that uses an electric field to control the current through a semiconductor. It comes in two types: junction FET (JFET) and metal-oxide-semiconductor FET ...
CMOS inverter (a NOT logic gate). Complementary metal–oxide–semiconductor (CMOS, pronounced "sea-moss ", / s iː m ɑː s /, /-ɒ s /) is a type of metal–oxide–semiconductor field-effect transistor (MOSFET) fabrication process that uses complementary and symmetrical pairs of p-type and n-type MOSFETs for logic functions. [1]
The dynamic (switching) power consumption of CMOS circuits is proportional to frequency. [8] Historically, the transistor power reduction afforded by Dennard scaling allowed manufacturers to drastically raise clock frequencies from one generation to the next without significantly increasing overall circuit power consumption.
The simplest bipolar current mirror (shown in Figure 1) implements this idea. It consists of two cascaded transistor stages acting accordingly as a reversed and direct voltage-to-current converters. The emitter of transistor Q 1 is connected to ground. Its collector and base are tied together, so its collector-base voltage is zero.
In field-effect transistors (FETs), depletion mode and enhancement mode are two major transistor types, corresponding to whether the transistor is in an on state or an off state at zero gate–source voltage. Enhancement-mode MOSFETs (metal–oxide–semiconductor FETs) are the common switching elements in most integrated circuits.
With lower operating voltages, the NBTI-induced threshold voltage change is a larger fraction of the logic voltage and disrupts operations. When a clock is gated off, transistors stop switching and NBTI effects accumulate much more rapidly. When the clock is re-enabled, the transistor thresholds have changed and the circuit may not operate.
Diode–transistor logic (DTL) was used in the IBM 608 which was the first all-transistorized computer. Early transistorized computers were implemented using discrete transistors, resistors, diodes and capacitors. The first diode–transistor logic family of integrated circuits was introduced by Signetics in 1962.