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  2. p–n diode - Wikipedia

    en.wikipedia.org/wiki/P–n_diode

    Band-bending diagram for p–n diode in forward bias. Diffusion drives carriers across the junction. Quasi-Fermi levels and carrier densities in forward biased p–n-diode. The figure assumes recombination is confined to the regions where majority carrier concentration is near the bulk values, which is not accurate when recombination-generation ...

  3. p–n junction - Wikipedia

    en.wikipedia.org/wiki/P–n_junction

    p–n junctions represent the simplest case of a semiconductor electronic device; a p-n junction by itself, when connected on both sides to a circuit, is a diode. More complex circuit components can be created by further combinations of p-type and n-type semiconductors; for example, the bipolar junction transistor (BJT) is a semiconductor in ...

  4. Depletion region - Wikipedia

    en.wikipedia.org/wiki/Depletion_region

    A PN junction in forward bias mode, the depletion width decreases. Both p and n junctions are doped at a 1e15/cm3 doping level, leading to built-in potential of ~0.59V. Observe the different Quasi Fermi levels for conduction band and valence band in n and p regions (red curves). A depletion region forms instantaneously across a p–n junction.

  5. Shockley diode equation - Wikipedia

    en.wikipedia.org/wiki/Shockley_diode_equation

    Shockley derives an equation for the voltage across a p-n junction in a long article published in 1949. [2] Later he gives a corresponding equation for current as a function of voltage under additional assumptions, which is the equation we call the Shockley ideal diode equation. [3]

  6. Diode - Wikipedia

    en.wikipedia.org/wiki/Diode

    A p–n junction diode in low forward bias mode. The depletion width decreases as voltage increases. Both p and n junctions are doped at a 1e15/cm3 doping level, leading to built-in potential of ~0.59V. Observe the different quasi Fermi levels for conduction band and valence band in n and p regions (red curves).

  7. Tunnel diode - Wikipedia

    en.wikipedia.org/wiki/Tunnel_diode

    In a conventional semiconductor diode, conduction takes place while the P-N junction is forward biased and blocks current flow when the junction is reverse biased. This occurs up to a point known as the "reverse breakdown voltage" at which point conduction begins (often accompanied by destruction of the device).

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