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When the p–n junction is forward-biased, charge carriers flow freely due to the reduction in energy barriers seen by electrons and holes. [4] When the p–n junction is reverse-biased, however, the junction barrier (and therefore resistance) becomes greater and charge flow is minimal.
A PN junction in forward bias mode, the depletion width decreases. Both p and n junctions are doped at a 1e15/cm3 doping level, leading to built-in potential of ~0.59V. Observe the different Quasi Fermi levels for conduction band and valence band in n and p regions (red curves). A depletion region forms instantaneously across a p–n junction.
Band-bending diagram for p–n diode in forward bias. Diffusion drives carriers across the junction. Quasi-Fermi levels and carrier densities in forward biased p–n-diode. The figure assumes recombination is confined to the regions where majority carrier concentration is near the bulk values, which is not accurate when recombination-generation ...
Increase in reverse bias does not allow the majority charge carriers to diffuse across the junction. However, this potential helps some minority charge carriers in crossing the junction. Since the minority charge carriers in the n-region and p-region are produced by thermally generated electron-hole pairs, these minority charge carriers are ...
A p–n junction diode in low forward bias mode. The depletion width decreases as voltage increases. Both p and n junctions are doped at a 1e15/cm3 doping level, leading to built-in potential of ~0.59V. Observe the different quasi Fermi levels for conduction band and valence band in n and p regions (red curves).
In forward bias, the current starts small but increases exponentially with voltage. The wavelength of the light emitted, and thus its color, depends on the band gap energy of the materials forming the p-n junction .
Inside the depletion region, both diffusion current and drift current are present. At equilibrium in a p–n junction, the forward diffusion current in the depletion region is balanced with a reverse drift current, so that the net current is zero. The diffusion constant for a doped material can be determined with the Haynes–Shockley experiment.
p–n junction operation in forward bias mode showing reducing depletion width. Both p and n junctions are doped at a 10 15 /cm 3 doping level, leading to built-in potential of ~ 0.59 V. Observe the different quasi-fermi levels for conduction band and valence band in n and p regions (red curves).