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Polycrystalline silicon (p-Si) is a pure and conductive form of the element composed of many crystallites, or grains of highly ordered crystal lattice.In 1984, studies showed that amorphous silicon (a-Si) is an excellent precursor for forming p-Si films with stable structures and low surface roughness. [2]
Amorphous silicon (a-Si) is the non-crystalline form of silicon used for solar cells and thin-film transistors in LCDs.. Used as semiconductor material for a-Si solar cells, or thin-film silicon solar cells, it is deposited in thin films onto a variety of flexible substrates, such as glass, metal and plastic.
Polycrystalline silicon, or multicrystalline silicon, also called polysilicon, poly-Si, or mc-Si, is a high purity, polycrystalline form of silicon, used as a raw material by the solar photovoltaic and electronics industry. Polysilicon is produced from metallurgical grade silicon by a chemical purification process, called the Siemens process.
A compound semiconductor is a semiconductor compound composed of chemical elements of at least two different species. These semiconductors form for example in periodic table groups 13–15 (old groups III–V), for example of elements from the Boron group (old group III, boron, aluminium, gallium, indium) and from group 15 (old group V, nitrogen, phosphorus, arsenic, antimony, bismuth).
Crystalline silicon or (c-Si) is the crystalline forms of silicon, either polycrystalline silicon (poly-Si, consisting of small crystals), or monocrystalline silicon (mono-Si, a continuous crystal). Crystalline silicon is the dominant semiconducting material used in photovoltaic technology for the production of solar cells .
Silicon deposition of the conductive layers makes them more conductive, reducing the ballast resistance that has a protective role. The gate oxide of some MOSFETs can be damaged by 50 volts of potential, the gate isolated from the junction and potential accumulating on it causing extreme stress on the thin dielectric layer; stressed oxide can ...
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The behaviour of light-sensitive defect passivation in amorphous silicon networks has been a topic of study since the discovery of the Staebler–Wronski effect in 1977. [120] Staebler and Wronski found a gradual decrease in photoconductivity and dark conductivity of amorphous silicon thin films upon exposure to light for several hours. This ...
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