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  2. CMOS - Wikipedia

    en.wikipedia.org/wiki/CMOS

    CMOS inverter (a NOT logic gate). Complementary metal–oxide–semiconductor (CMOS, / ˈ s iː m ɒ s /, also US: /-ɔː s / [1]) is a type of metal–oxide–semiconductor field-effect transistor (MOSFET) fabrication process that uses complementary and symmetrical pairs of p-type and n-type MOSFETs for logic functions. [2]

  3. Subthreshold slope - Wikipedia

    en.wikipedia.org/wiki/Subthreshold_slope

    The subthreshold slope is a feature of a MOSFET's current–voltage characteristic.. In the subthreshold region, the drain current behaviour—though being controlled by the gate terminal—is similar to the exponentially decreasing current of a forward biased diode.

  4. Translinear circuit - Wikipedia

    en.wikipedia.org/wiki/Translinear_circuit

    A translinear circuit is a circuit that carries out its function using the translinear principle. These are current-mode circuits that can be made using transistors that obey an exponential current-voltage characteristic—this includes bipolar junction transistors (BJTs) and CMOS transistors in weak inversion.

  5. Multi-threshold CMOS - Wikipedia

    en.wikipedia.org/wiki/Multi-threshold_CMOS

    Multi-threshold CMOS (MTCMOS) is a variation of CMOS chip technology which has transistors with multiple threshold voltages (V th) in order to optimize delay or power.The V th of a MOSFET is the gate voltage where an inversion layer forms at the interface between the insulating layer (oxide) and the substrate (body) of the transistor.

  6. Semiconductor device modeling - Wikipedia

    en.wikipedia.org/wiki/Semiconductor_device_modeling

    Schematic of two stages of CMOS inverter, showing input and output voltage-time plots. I on and I off (along with I DG, I SD and I DB components) indicate technologically controlled factors. Credit: Prof. Robert Dutton in CRC Electronic Design Automation for IC Handbook, Vol II, Chapter 25, by permission.

  7. Threshold voltage - Wikipedia

    en.wikipedia.org/wiki/Threshold_voltage

    In a given technology node, such as the 90-nm CMOS process, the threshold voltage depends on the choice of oxide and on oxide thickness. Using the body formulas above, V T N {\displaystyle V_{TN}} is directly proportional to γ {\displaystyle \gamma } , and t O X {\displaystyle t_{OX}} , which is the parameter for oxide thickness.

  8. Current-mode logic - Wikipedia

    en.wikipedia.org/wiki/Current-mode_logic

    The fast operation of CML circuits is mainly due to their lower output voltage swing compared to the static CMOS circuits, as well as the very fast current switching taking place at the input differential pair transistors. One of the primary requirements of a current-mode logic circuit is that the current bias transistor must remain in the ...

  9. CMOS amplifier - Wikipedia

    en.wikipedia.org/wiki/CMOS_amplifier

    In high performance CMOS (complementary metal–oxide–semiconductor) amplifier circuits, transistors are not only used to amplify the signal but are also used as active loads to achieve higher gain and output swing in comparison with resistive loads. [1] [2] [3] CMOS technology was introduced primarily for digital circuit design.