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SCR 4-layer (p-n-p-n) diagram. A silicon controlled rectifier or semiconductor controlled rectifier is a four-layer solid-state current-controlling device.The name "silicon controlled rectifier" is General Electric's trade name for a type of thyristor.
A four terminal device (e.g. Silicon Controlled Switch -SCS). SCS is a type of thyristor having four layers and four terminals called anode, anode gate, cathode gate and cathode. the terminals are connected to the first, second, third and fourth layer respectively. [23]
The thyristor is a four-layered, three-terminal semiconductor device, with each layer consisting of alternating N-type or P-type material, for example P-N-P-N. The main terminals, labelled anode and cathode, are across all four layers. The control terminal, called the gate, is attached to p-type material near the cathode.
In 1978 J. D. Plummer and B. Scharf patented a NPNP transistor device combining MOS and bipolar capabilities for power control and switching. [15] [16] The development of IGBT was characterized by the efforts to completely suppress the thyristor operation or the latch-up in the four-layer device because the latch-up caused the fatal device ...
A sculpture representing a Shockley 4-layer diode, on the sidewalk in front of the new building at 391 San Antonio Rd., Mountain View, California, which was the original site of the Shockley Semiconductor Laboratories where the first silicon device work in Silicon Valley was done
Mercury-arc rectifiers have been replaced by silicon semiconductor rectifiers and high-power thyristor circuits in the mid-1970s. The most powerful mercury-arc rectifiers ever built were installed in the Manitoba Hydro Nelson River Bipole HVDC project, with a combined rating of more than 1 GW and 450 kV.
A semiconductor diode is a device typically made from a single p–n junction.At the junction of a p-type and an n-type semiconductor, there forms a depletion region where current conduction is inhibited by the lack of mobile charge carriers.
Diacs are bi-directional diodes that switch AC voltages and trigger triacs or silicon-controlled rectifiers (SCRs). Except for a small leakage current, diacs do not conduct until the breakover voltage is reached. Triacs are three-terminal, silicon devices that function as two SCRs configured in an inverse, parallel arrangement.
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