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  2. Gallium arsenide - Wikipedia

    en.wikipedia.org/wiki/Gallium_arsenide

    Gallium arsenide (GaAs) is a III-V direct band gap semiconductor with a zinc blende crystal structure. Gallium arsenide is used in the manufacture of devices such as microwave frequency integrated circuits , monolithic microwave integrated circuits , infrared light-emitting diodes , laser diodes , solar cells and optical windows.

  3. Gallium compounds - Wikipedia

    en.wikipedia.org/wiki/Gallium_compounds

    Gallium reacts with ammonia at 1050 °C to form gallium nitride, GaN. Gallium also forms binary compounds with phosphorus, arsenic, and antimony: gallium phosphide (GaP), gallium arsenide (GaAs), and gallium antimonide (GaSb). These compounds have the same structure as ZnS, and have important semiconducting properties.

  4. Gallium arsenide antimonide - Wikipedia

    en.wikipedia.org/wiki/Gallium_arsenide_antimonide

    Gallium arsenide antimonide, also known as gallium antimonide arsenide or GaAsSb (Ga As (1-x) Sb x), is a ternary III-V semiconductor compound; x indicates the fractions of arsenic and antimony in the alloy. GaAsSb refers generally to any composition of the alloy. It is an alloy of gallium arsenide (GaAs) and gallium antimonide (GaSb).

  5. Bridgman–Stockbarger method - Wikipedia

    en.wikipedia.org/wiki/Bridgman–Stockbarger_method

    The Bridgman method is a popular way of producing certain semiconductor crystals such as gallium arsenide, for which the Czochralski method is more difficult. The process can reliably produce single-crystal ingots, but does not necessarily result in uniform properties through the crystal.

  6. Category:Arsenides - Wikipedia

    en.wikipedia.org/wiki/Category:Arsenides

    Learn about the properties, structures and applications of different arsenides.

  7. Molecular-beam epitaxy - Wikipedia

    en.wikipedia.org/wiki/Molecular-beam_epitaxy

    Molecular-beam epitaxy takes place in high vacuum or ultra-high vacuum (10 −8 –10 −12 Torr).The most important aspect of an MBE process is the deposition rate (typically less than 3,000 nm per hour) that allows the films to grow epitaxially (in layers on top of the existing crystal).

  8. Organogallium chemistry - Wikipedia

    en.wikipedia.org/wiki/Organogallium_chemistry

    Organogallium compounds can be synthesized by transmetallation, for example the reaction of gallium metal with dimethylmercury: 2Ga + 3Me 2 Hg → 2Me 3 Ga + 3 Hg. or via organolithium compounds or Grignards: GaCl 3 + 3MeMgBr → Me 3 Ga + 3MgBrCl. The electron-deficient nature of gallium can be removed by complex formation, for example

  9. Adhesive bonding - Wikipedia

    en.wikipedia.org/wiki/Adhesive_bonding

    Adhesive bonding is a joining technique used in the manufacture and repair of a wide range of products. Along with welding and soldering, adhesive bonding is one of the basic joining processes. In this technique, components are bonded together using adhesives. The broad range of types of adhesives available allows numerous materials to be ...