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The switching time is ~100 ps for the small-signal diodes, and up to tens of nanoseconds for special high-capacity power diodes. With p–n-junction switching, there is also a reverse recovery current, which in high-power semiconductors brings increased EMI noise. With Schottky diodes, switching is essentially "instantaneous" with only a slight ...
The low on-resistance property of a MOSFET reduces ohmic losses compared to the diode rectifier (below 32 A in this case), which exhibits a significant voltage drop even at very low current levels. Paralleling two MOSFETs (pink curve) reduces the losses further, whereas paralleling several diodes won't significantly reduce the forward-voltage drop.
A variety of silicon diodes of different current ratings. At left is a bridge rectifier. On the 3 center diodes, a painted band identifies the cathode terminal. Silicon diodes are the most widely used rectifiers for lower voltages and powers, and have largely replaced other rectifiers. Due to their substantially lower forward voltage (0.3V ...
Various semiconductor diodes. Left: A four-diode bridge rectifier.Next to it is a 1N4148 signal diode.On the far right is a Zener diode.In most diodes, a white or black painted band identifies the cathode into which electrons will flow when the diode is conducting.
The name "silicon controlled rectifier" is General Electric's trade name for a type of thyristor. The principle of four-layer p–n–p–n switching was developed by Moll, Tanenbaum, Goldey, and Holonyak of Bell Laboratories in 1956. [1]
A PIN diode switch can switch much more quickly (e.g., 1 microsecond), although at lower RF frequencies it isn't reasonable to expect switching times in the same order of magnitude as the RF period. For example, the capacitance of an "off"-state discrete PIN diode might be 1 pF. At 320 MHz, the capacitive reactance of 1 pF is 497 ohms:
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