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Focused ion beam, also known as FIB, is a technique used particularly in the semiconductor industry, materials science and increasingly in the biological field for site-specific analysis, deposition, and ablation of materials. A FIB setup is a scientific instrument that resembles a scanning electron microscope (SEM).
Photo: The MaMFIS operating at electron beam energy of up to 4 keV and electron current density of about 20 kA/cm 2. Main Magnetic Focus Ion Source (MaMFIS) is a compact ion source with extremely high electron current density. The device is designed for production of ions of arbitrary elements in any charge states, in particular, of highly ...
An ion beam is a beam of ions, a type of charged particle beam. Ion beams have many uses in electronics manufacturing (principally ion implantation) and other industries. There are many ion beam sources, some derived from the mercury vapor thrusters developed by NASA in the 1960s. The most widely used ion beams are of singly-charged ions.
Ion beam deposition (IBD) is a process of applying materials to a target through the application of an ion beam. [1] Ion beam deposition setup with mass separator. An ion beam deposition apparatus typically consists of an ion source, ion optics, and the deposition target. Optionally a mass analyzer can be incorporated. [2] In the ion source ...
The configuration of the ion beam apparatus can be changed and made more complex with the incorporation of additional components. The techniques for ion beam analysis are designed for specific purposes. Some techniques and ion sources are shown in table 1. Detector types and arrangements for ion beam techniques are shown in table 2.
FEI Company (Field Electron and Ion Company) was an American company that designed, manufactured, and supported microscope technology. Headquartered in Hillsboro, Oregon , FEI had over 2,800 employees and sales and service operations in more than 50 countries around the world.
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The ion current density (or similarly the ion flux), the ion energy spread, and the resolution of the ion beam are key factors in ion gun design. The ion current density is controlled by the ion source, the energy spread is determined primarily by the extraction grid, and the resolution is determined primarily by the optical column.