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Gallium arsenide (GaAs) is a III-V direct band gap semiconductor with a zinc blende crystal structure. Gallium arsenide is used in the manufacture of devices such as microwave frequency integrated circuits , monolithic microwave integrated circuits , infrared light-emitting diodes , laser diodes , solar cells and optical windows.
A compound semiconductor is a semiconductor compound composed of chemical elements of at least two different species. These semiconductors form for example in periodic table groups 13–15 (old groups III–V), for example of elements from the Boron group (old group III, boron, aluminium, gallium, indium) and from group 15 (old group V, nitrogen, phosphorus, arsenic, antimony, bismuth).
Gallium arsenide (GaAs) features isolated arsenic centers with a zincblende structure (wurtzite structure can eventually also form in nanostructures), and with predominantly covalent bonding – it is a III–V semiconductor.
LONDON (Reuters) -The British government has bought a struggling factory from the U.S. firm Coherent Inc. to secure domestic manufacture of gallium arsenide semiconductors, used in military ...
Cray had intended to use gallium arsenide circuitry in the Cray-2, which would not only offer much higher switching speeds but also used less energy and thus ran cooler as well. At the time the Cray-2 was being designed, the state of GaAs manufacturing simply was not up to the task of supplying a supercomputer. [ 9 ]
Gallium reacts with ammonia at 1050 °C to form gallium nitride, GaN. Gallium also forms binary compounds with phosphorus, arsenic, and antimony: gallium phosphide (GaP), gallium arsenide (GaAs), and gallium antimonide (GaSb). These compounds have the same structure as ZnS, and have important semiconducting properties.
MMICs were originally fabricated using gallium arsenide (GaAs), a III-V compound semiconductor. It has two fundamental advantages over silicon (Si), the traditional material for IC realisation: device speed and a semi-insulating substrate. Both factors help with the design of high-frequency circuit functions.
Gallium also forms binary compounds with phosphorus, arsenic, and antimony: gallium phosphide (GaP), gallium arsenide (GaAs), and gallium antimonide (GaSb). These compounds have the same structure as ZnS, and have important semiconducting properties.
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