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Aluminising vacuum chamber at Mont Mégantic Observatory used for re-coating telescope mirrors. [1] Vacuum deposition is a group of processes used to deposit layers of material atom-by-atom or molecule-by-molecule on a solid surface. These processes operate at pressures well below atmospheric pressure (i.e., vacuum). The deposited layers can ...
The VLS process takes place as follows: A thin (~1–10 nm) Au film is deposited onto a silicon (Si) wafer substrate by sputter deposition or thermal evaporation. The wafer is annealed at temperatures higher than the Au-Si eutectic point, creating Au-Si alloy droplets on the wafer surface (the thicker the Au film, the larger the droplets).
PVD process flow diagram. Physical vapor deposition (PVD), sometimes called physical vapor transport (PVT), describes a variety of vacuum deposition methods which can be used to produce thin films and coatings on substrates including metals, ceramics, glass, and polymers. PVD is characterized by a process in which the material transitions from ...
However, the processing time is typically very long and the deposition rate is slow, so new routes have been invented to develop more rapid infiltration techniques: Thermal-gradient CVI with forced flow – In this process, a forced flow of gases and matrix material is used to achieve less porous and more uniformly dense material.
Chemical vapor deposition (CVD) is a vacuum deposition method used to produce high-quality, and high-performance, solid materials. The process is often used in the semiconductor industry to produce thin films .
Additionally the gas phase process allows for easy treatment of complex parts since the coverage of the reactant is generally diffusion limited. Microelectromechanical Systems ( MEMS ) sensors often use molecular vapor deposition as a technique to address stiction and other parasitic issues relative to surface-to-surface interactions.
It is a process for growing crystalline layers to create complex semiconductor multilayer structures. [2] In contrast to molecular-beam epitaxy (MBE), the growth of crystals is by chemical reaction and not physical deposition. This takes place not in vacuum, but from the gas phase at moderate pressures (10 to 760 Torr).
An alternative process is to co-evaporate copper, gallium, indium and selenium onto a heated substrate. [citation needed] A non-vacuum-based alternative process deposits nanoparticles of the precursor materials on the substrate and then sinters them in situ. Electroplating is another low cost alternative to apply the CIGS layer. [citation needed]