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The resulting average drift mobility is: [20] = ¯ where q is the elementary charge, m* is the carrier effective mass, and τ is the average scattering time. If the effective mass is anisotropic (direction-dependent), m * is the effective mass in the direction of the electric field.
There are two recognized types of charge carriers in semiconductors.One is electrons, which carry a negative electric charge.In addition, it is convenient to treat the traveling vacancies in the valence band electron population as a second type of charge carrier, which carry a positive charge equal in magnitude to that of an electron.
Depending on the model, increased temperature may either increase or decrease carrier mobility, applied electric field can increase mobility by contributing to thermal ionization of trapped charges, and increased concentration of localized states increases the mobility as well. Charge transport in the same material may have to be described by ...
The proportionality constant is known as mobility of the carrier, which is a material property. A good conductor would have a high mobility value for its charge carrier, which means higher velocity, and consequently higher current values for a given electric field strength. There is a limit though to this process and at some high field value, a ...
The particles acquire an electrical mobility and are driven by the field to a collecting electrode. Instruments exist which select particles with a narrow range of electrical mobility, or particles with electrical mobility larger than a predefined value. [3] The former are generally referred to as "differential mobility analyzers".
These ions in the crystal lattice result in a charge disparity, creating a built in electric field. [2] In a biased p-n junction, the drift current is independent of the biasing, as the number of minority carriers is independent of the biasing voltages. But as minority charge carriers can be thermally generated, drift current is temperature ...
The formula for evaluating the drift velocity of charge carriers in a material of constant cross-sectional area is given by: [1] =, where u is the drift velocity of electrons, j is the current density flowing through the material, n is the charge-carrier number density, and q is the charge on the charge-carrier.
where the js are the current densities of electrons (e) and holes (p), the μs the charge carrier mobilities, E is the electric field, n and p the number densities of charge carriers, the Ds are diffusion coefficients, and x is position. The first term of the equations is the drift current, and the second term is the diffusion current.