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CMOS inverter (a NOT logic gate). Complementary metal–oxide–semiconductor (CMOS, pronounced "sea-moss", / s iː m ɑː s /, /-ɒ s /) is a type of metal–oxide–semiconductor field-effect transistor (MOSFET) fabrication process that uses complementary and symmetrical pairs of p-type and n-type MOSFETs for logic functions. [1]
The hex inverter is an integrated circuit that contains six inverters. For example, the 7404 TTL chip which has 14 pins and the 4049 CMOS chip which has 16 pins, 2 of which are used for power/referencing, and 12 of which are used by the inputs and outputs of the six inverters (the 4049 has 2 pins with no connection).
A power inverter, inverter, or invertor is a power electronic device or circuitry that changes direct current (DC) to alternating current (AC). [1] The resulting AC frequency obtained depends on the particular device employed. Inverters do the opposite of rectifiers which were originally large electromechanical devices converting AC to DC.
Domino logic is a CMOS -based evolution of dynamic logic techniques consisting of a dynamic logic gate cascaded into a static CMOS inverter. [2] The term derives from the fact that in domino logic, each stage ripples the next stage for evaluation, similar to dominoes falling one after the other. Domino logic contrasts with other solutions to ...
A schematic of a simple 3-inverter ring oscillator whose output frequency is 1/ (6×inverter delay). A ring oscillator is a device composed of an odd number of NOT gates in a ring, whose output oscillates between two voltage levels, representing true and false. The NOT gates, or inverters, are attached in a chain and the output of the last ...
AND-OR-invert. AND-OR-invert (AOI) logic and AOI gates are two-level compound (or complex) logic functions constructed from the combination of one or more AND gates followed by a NOR gate (equivalent to an OR gate through an Inverter gate, which is the "OI" part of "AOI"). Construction of AOI cells is particularly efficient using CMOS ...
FO4. In digital electronics, Fan-out of 4 is a measure of time used in digital CMOS technologies: the gate delay of a component with a fan-out of 4. Fan out = C load / C in, where. As a delay metric, one FO4 is the delay of an inverter, driven by an inverter 4x smaller than itself, and driving an inverter 4x larger than itself.
Dynamic random-access memory (dynamic RAM or DRAM) is a type of random-access semiconductor memory that stores each bit of data in a memory cell, usually consisting of a tiny capacitor and a transistor, both typically based on metal–oxide–semiconductor (MOS) technology. While most DRAM memory cell designs use a capacitor and transistor ...
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