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The dimeric silicon dioxide, (SiO 2) 2 has been obtained by reacting O 2 with matrix isolated dimeric silicon monoxide, (Si 2 O 2). In dimeric silicon dioxide there are two oxygen atoms bridging between the silicon atoms with an Si–O–Si angle of 94° and bond length of 164.6 pm and the terminal Si–O bond length is 150.2 pm.
The number of possible isomers increases rapidly with the number of silicon atoms. The members of the series (in terms of number of silicon atoms) follow: silane, SiH 4, 1 silicon atom and 4 hydrogen atoms, analogous to methane; disilane, Si 2 H 6 or H 3 Si−SiH 3, 2 silicon atoms and 6 hydrogen atoms, analogous to ethane
It is also used in semiconductor electronics. It is manufactured from silicon dioxide and carbon in an Acheson furnace between 1600 and 2500 °C. There are 250 known crystalline forms with alpha silicon carbide the most common. Silicon itself is an important semiconductor material used in microchips.
Metal silicides, silicon halides, and similar inorganic compounds can be prepared by directly reacting elemental silicon or silicon dioxide with stable metals or with halogens. Silanes, compounds of silicon and hydrogen, are often used as strong reducing agents, and can be prepared from aluminum–silicon alloys and hydrochloric acid.
A compound semiconductor is a semiconductor compound composed of chemical elements of at least two different species. These semiconductors form for example in periodic table groups 13–15 (old groups III–V), for example of elements from the Boron group (old group III, boron, aluminium, gallium, indium) and from group 15 (old group V, nitrogen, phosphorus, arsenic, antimony, bismuth).
Note that the especially high molar values, as for paraffin, gasoline, water and ammonia, result from calculating specific heats in terms of moles of molecules. If specific heat is expressed per mole of atoms for these substances, none of the constant-volume values exceed, to any large extent, the theoretical Dulong–Petit limit of 25 J⋅mol ...
Crystalline bulk silicon is rather inert, but becomes more reactive at high temperatures. Like its neighbour aluminium, silicon forms a thin, continuous surface layer of silicon dioxide (SiO 2) that protects the material beneath from oxidation. Because of this, silicon does not measurably react with the air below 900 °C.
A silicon–oxygen bond (Si−O bond) is a chemical bond between silicon and oxygen atoms that can be found in many inorganic and organic compounds. [1] In a silicon–oxygen bond, electrons are shared unequally between the two atoms, with oxygen taking the larger share due to its greater electronegativity.