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The introduction of the transistor is often considered one of the most important inventions in history. [1] [2] Transistors are broadly classified into two categories: bipolar junction transistor (BJT) and field-effect transistor (FET). [3] The principle of a field-effect transistor was proposed by Julius Edgar Lilienfeld in 1925. [4]
A ChemFET is a chemically-sensitive field-effect transistor, that is a field-effect transistor used as a sensor for measuring chemical concentrations in solution. [1] When the target analyte concentration changes, the current through the transistor will change accordingly. [2] Here, the analyte solution separates the source and gate electrodes. [3]
The use of the metal–semiconductor diode rectifier was proposed by Lilienfeld in 1926 in the first of his three transistor patents as the gate of the metal–semiconductor field effect transistors. [11] The theory of the field-effect transistor using a metal/semiconductor gate was advanced by William Shockley in 1939.
First edition. Electrons and Holes in Semiconductors with Applications to Transistor Electronics is a book by Nobel Prize winner William Shockley, [1] first published in 1950. . It was a primary source, and was used as the first textbook, for scientists and engineers learning the new field of semiconductors as applied to the development of the transis
The metal–oxide–semiconductor field-effect transistor (MOSFET, MOS-FET, or MOS FET), also known as the metal–oxide–silicon transistor (MOS transistor, or MOS), [71] is a type of field-effect transistor that is fabricated by the controlled oxidation of a semiconductor, typically silicon.
The floating body effect is the effect of dependence of the body potential of a transistor realized by the silicon on insulator (SOI) technology on the history of its biasing and the carrier recombination processes. The transistor's body forms a capacitor against the insulated substrate.
An organic field-effect transistor (OFET) is a field-effect transistor using an organic semiconductor in its channel. OFETs can be prepared either by vacuum evaporation of small molecules, by solution-casting of polymers or small molecules, or by mechanical transfer of a peeled single-crystalline organic layer onto a substrate.
It is a special type of MOSFET (metal–oxide–semiconductor field-effect transistor), [1] and shares the same basic structure, but with the metal gate replaced by an ion-sensitive membrane, electrolyte solution and reference electrode. [2] Invented in 1970, the ISFET was the first biosensor FET (BioFET). The schematic view of an ISFET.