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A crowbar circuit is an electrical circuit used for preventing an overvoltage or surge condition of a power supply unit from damaging the circuits attached to the power supply. It operates by putting a short circuit or low resistance path across the voltage output (V o ), like dropping a crowbar across the output terminals of the power supply.
Another type of testing called IDDQ testing measures the way the power supply current of a CMOS integrated circuit changes when a small number of slowly changing test vectors are applied. Since CMOS draws a very low current when its inputs are static, any increase in that current indicates a potential problem.
CMOS inverter (a NOT logic gate). Complementary metal–oxide–semiconductor (CMOS, pronounced "sea-moss ", / s iː m ɑː s /, /-ɒ s /) is a type of metal–oxide–semiconductor field-effect transistor (MOSFET) fabrication process that uses complementary and symmetrical pairs of p-type and n-type MOSFETs for logic functions. [1]
Iddq testing is a method for testing CMOS integrated circuits for the presence of manufacturing faults. It relies on measuring the supply current (Idd) in the quiescent state (when the circuit is not switching and inputs are held at static values). The current consumed in the state is commonly called Iddq for Idd (quiescent) and hence the name.
This problem arises from small differences in the individual responsitivity of the sensor array (including any local postamplification stages) that might be caused by variations in the pixel size, material or interference with the local circuitry. It might be affected by changes in the environment like different temperatures, exposure times, etc.
An inrush current limiter is a device or devices combination used to limit inrush current. Passive resistive components such as resistors (with power dissipation drawback), or negative temperature coefficient (NTC) thermistors are simple options while the positive one (PTC) is used to limit max current afterward as the circuit has been operating (with cool-down time drawback on both).
Negative-bias temperature instability (NBTI) is a key reliability issue in MOSFETs, a type of transistor aging.NBTI manifests as an increase in the threshold voltage and consequent decrease in drain current and transconductance of a MOSFET.
Shallow trench isolation (STI), also known as box isolation technique, is an integrated circuit feature which prevents electric current leakage between adjacent semiconductor device components. STI is generally used on CMOS process technology nodes of 250 nanometers and smaller.