Search results
Results from the WOW.Com Content Network
In 2017, the world's production of low-grade gallium was c. 315 tons—an increase of 15% from 2016. China, Japan, South Korea, Russia, and Ukraine were the leading producers, while Germany ceased primary production of gallium in 2016. The yield of high-purity gallium was ca. 180 tons, mostly originating from China, Japan, Slovakia, UK and U.S.
Global Solar Energy (module producer, US-based subsidiary of Hanergy) GSHK Solar (module producer, HK-based) Hanergy-Solibro (former subsidiary of Q-Cells) HelioVolt; Nanosolar; Nice (former Manz / Würth Solar) [6] Odersun; Siva Power; Solar Frontier (subsidiary of Showa Shell Sekiyu) [7] Solarion [8] Soltecture (previously Sulfurcell ...
Largest producer Second largest producer Complete list Aluminium [6] China India: List of countries by aluminium production: Bauxite [7] Australia Guinea: List of countries by bauxite production: Bismuth [8] China Vietnam: List of countries by bismuth production: Copper [9] Chile Peru: List of countries by copper production: Chromium [10] South ...
Indium Corporation is a materials refiner, smelter, manufacturer, and supplier to the global electronics, semiconductor, thin-film, and thermal management markets.Products include solders and fluxes; brazes; thermal interface materials; sputtering targets; indium, gallium, germanium, and tin metals and inorganic compounds; and NanoFoil.
Gallium(I) oxide is a brown-black diamagnetic solid which is resistant to further oxidation in dry air. It starts decomposing upon heating at temperatures above 500 °C, and the decomposition rate depends on the atmosphere (vacuum, inert gas, air).
The resulting production of 71 Ge was calculated in 2005 to be 79% of expected, [5] confirming an earlier (1998) estimate from one of the experiments on GALLEX (another gave results indistinguishable from 100%, similarly to the Cr experiment on SAGE). [6] [7] This discrepancy soon became known as the gallium anomaly.
Gallium arsenide was first synthesized and studied by Victor Goldschmidt in 1926 by passing arsenic vapors mixed with hydrogen over gallium(III) oxide at 600 °C. [7] [8] The semiconductor properties of GaAs and other III-V compounds were patented by Heinrich Welker at Siemens-Schuckert in 1951 [9] and described in a 1952 publication. [10]
As Ga will not react with N 2 below 1000 °C, the powder must be made from something more reactive, usually in one of the following ways: 2 Ga + 2 NH 3 → 2 GaN + 3 H 2 [61] Ga 2 O 3 + 2 NH 3 → 2 GaN + 3 H 2 O [62] Gallium nitride can also be synthesized by injecting ammonia gas into molten gallium at 900–980 °C at normal atmospheric ...