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Using the body formulas above, is directly proportional to , and , which is the parameter for oxide thickness. Thus, the thinner the oxide thickness, the lower the threshold voltage. Although this may seem to be an improvement, it is not without cost; because the thinner the oxide thickness, the higher the subthreshold leakage current through ...
Every time the temperature sensing network determines that a rise above the specified junction temperature (), is imminent, measures such as clock gating, clock stretching, clock speed reduction and others (commonly referred to as thermal throttling) are applied to prevent the temperature to raise further. If the applied mechanisms are not ...
The minimum subthreshold swing of a conventional device can be found by letting and/or , which yield , = (known as thermionic limit) and 60 mV/dec at room temperature (300 K). A typical experimental subthreshold swing for a scaled MOSFET at room temperature is ~70 mV/dec, slightly degraded due to short-channel MOSFET parasitics.
If the MOSFET is an n-channel or nMOS FET, then the source and drain are n+ regions and the body is a p region. If the MOSFET is a p-channel or pMOS FET, then the source and drain are p+ regions and the body is a n region. The source is so named because it is the source of the charge carriers (electrons for n-channel, holes for p-channel) that ...
is the thermal voltage, and n {\displaystyle n} is the ideality factor , also known as the quality factor , emission coefficient , or the material constant . The equation is called the Shockley ideal diode equation when the ideality factor n {\displaystyle n} equals 1, thus n {\displaystyle n} is sometimes omitted.
In semiconductor electronics, Dennard scaling, also known as MOSFET scaling, is a scaling law which states roughly that, as transistors get smaller, their power density stays constant, so that the power use stays in proportion with area; both voltage and current scale (downward) with length.
Thermal Conductivity: Theory, Properties, and Applications. Springer Science & Business Media. ISBN 978-0-306-48327-1. Younes Shabany (2011). Heat Transfer: Thermal Management of Electronics. CRC Press. ISBN 978-1-4398-1468-0. Xingcun Colin Tong (2011). Advanced Materials for Thermal Management of Electronic Packaging. Springer Science ...
Thermal conduction rate, thermal current, thermal/heat flux, thermal power transfer P = / W ML 2 T −3: Thermal intensity I = / W⋅m −2: MT −3: Thermal/heat flux density (vector analogue of thermal intensity above) q