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This category is being considered for merging into Category:Chemical vapor deposition. This does not mean that any of the pages in the category will be deleted. They may, however, be recategorized. Please share your thoughts on the matter at this category's entry on the Categories for discussion page. Please do not empty the category or remove ...
Chemical vapor deposition techniques (10 P) Pages in category "Chemical vapor deposition" The following 4 pages are in this category, out of 4 total.
Chemical vapor deposition (CVD) is a vacuum deposition method used to produce high-quality, and high-performance, solid materials. The process is often used in the semiconductor industry to produce thin films .
Au-Si droplets on the surface of the substrate act to lower the activation energy of normal vapor-solid growth. For example, Si can be deposited by means of a SiCl 4:H 2 gaseous mixture reaction (chemical vapor deposition), only at temperatures above 800 °C, in normal vapor-solid growth. Moreover, below this temperature almost no Si is ...
When the vapor source is a liquid or solid, the process is called physical vapor deposition (PVD), [3] which is used in semiconductor devices, thin-film solar panels, and glass coatings. [4] When the source is a chemical vapor precursor, the process is called chemical vapor deposition (CVD).
Evaporative deposition: the material to be deposited is heated to a high vapor pressure by electrical resistance heating in "high" vacuum. [4] [5] Close-space sublimation, the material, and substrate are placed close to one another and radiatively heated. Pulsed laser deposition: a high-power laser ablates material from the target into a vapor.
Plasma-enhanced chemical vapor deposition (PECVD) is a chemical vapor deposition process used to deposit thin films from a gas state to a solid state on a substrate. Chemical reactions are involved in the process, which occur after creation of a plasma of the reacting gases.
The method is also particularly suitable for the growth of large good-quality crystals while maintaining control over their composition. Disadvantages of the method include the need of expensive autoclaves, and the impossibility of observing the crystal as it grows if a steel tube is used. [2]