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As channel length decreases, the barrier φ B to be surmounted by an electron from the source on its way to the drain reduces. Drain-induced barrier lowering (DIBL) is a short-channel effect in MOSFETs referring originally to a reduction of threshold voltage of the transistor at higher drain voltages.
To combat drain-induced barrier lowering (DIBL), MOSFET substrate near source and drain region are heavily doped (p+ in case of NMOS and n+ in case of PMOS) to reduce the width of the depletion region in the vicinity of source/substrate and drain/substrate junctions (called halo doping to describe the limitation of this heavy doping to the ...
Overstressing the gate oxide can lead to stress-induced leakage current. In bipolar junction transistors, the emitter current is the sum of the collector and base currents. I e = I c + I b. The collector current has two components: minority carriers and majority carriers. The minority current is called the leakage current [clarification needed].
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The French rape trial that shocked the world and sparked widespread calls for justice for women rape victims ended on Thursday with the conviction of 51 men for raping and attempting to rape ...
It has since become one of the leading sources of user-generated reviews and ratings for businesses. Yelp grew in usage and raised several rounds of funding in the following years. By 2010, it had $30 million in revenue, and the website had published about 4.5 million crowd-sourced reviews. From 2009 to 2012, Yelp expanded throughout Europe and ...
Jude Bellingham missed a penalty but scored a late winner and Vinicius Jr. was sent off as 10-man Real Madrid fought back in the most dramatic of fashions to beat Valencia 2-1 and return to the ...
Researchers from Mass General Brigham, a health care system in Boston, Massachusetts, shared with Fox News Digital some of the scientific developments and breakthroughs they expect to see in 2025.