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Crystalline MoS 2 exists in one of two phases, 2H-MoS 2 and 3R-MoS 2, where the "H" and the "R" indicate hexagonal and rhombohedral symmetry, respectively. In both of these structures, each molybdenum atom exists at the center of a trigonal prismatic coordination sphere and is covalently bonded to six sulfide ions.
Molybdenite is a mineral of molybdenum disulfide, Mo S 2. Similar in appearance and feel to graphite , molybdenite has a lubricating effect that is a consequence of its layered structure. The atomic structure consists of a sheet of molybdenum atoms sandwiched between sheets of sulfur atoms.
Volume-regulated anion channels (VRACs) are crucial to the regulation of cell size by transporting chloride ions and various organic osmolytes, such as taurine or glutamate, across the plasma membrane, [1] and that is not the only function these channels have been linked to. Some research has also suggested that VRACs may be water-permeable as ...
The threshold voltage (and consequently the drain to source on-current) is modified by the work function difference between the gate material and channel material. Because polysilicon is a semiconductor, its work function can be modulated by adjusting the type and level of doping.
Shown to the right is a diagram of band-bending interfaces between two different metals (high and low work functions) and two different semiconductors (n-type and p-type). Volker Heine was one of the first to estimate the length of the tail end of metal electron states extending into the semiconductor's energy gap. He calculated the variation ...
In fact, empirically, it is found that neither of the above extremes is quite correct. The choice of metal does have some effect, and there appears to be a weak correlation between the metal work function and the barrier height, however the influence of the work function is only a fraction of that predicted by the Schottky-Mott rule. [6]: 143
A carbon nanotube field-effect transistor (CNTFET) is a field-effect transistor that utilizes a single carbon nanotube (CNT) or an array of carbon nanotubes as the channel material, instead of bulk silicon, as in the traditional MOSFET structure. There have been major developments since CNTFETs were first demonstrated in 1998. [1] [2]
But the conductivity of the poly-silicon layer is very low and because of this low conductivity, the charge accumulation is low, leading to a delay in channel formation and thus unwanted delays in circuits. The poly layer is doped with N-type or P-type impurity to make it behave like a perfect conductor and reduce the delay.