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Due to the lack of spatial inversion symmetry, odd-layer MoS2 is a promising material for valleytronics because both the CBM and VBM have two energy-degenerate valleys at the corners of the first Brillouin zone, providing an exciting opportunity to store the information of 0s and 1s at different discrete values of the crystal momentum.
The work function depends on the configurations of atoms at the surface of the material. For example, on polycrystalline silver the work function is 4.26 eV, but on silver crystals it varies for different crystal faces as (100) face: 4.64 eV, (110) face: 4.52 eV, (111) face: 4.74 eV. [13] Ranges for typical surfaces are shown in the table below ...
Shown to the right is a diagram of band-bending interfaces between two different metals (high and low work functions) and two different semiconductors (n-type and p-type). Volker Heine was one of the first to estimate the length of the tail end of metal electron states extending into the semiconductor's energy gap. He calculated the variation ...
The threshold voltage (and consequently the drain to source on-current) is modified by the work function difference between the gate material and channel material. Because polysilicon is a semiconductor, its work function can be modulated by adjusting the type and level of doping.
Molybdenite is a mineral of molybdenum disulfide, Mo S 2.Similar in appearance and feel to graphite, molybdenite has a lubricating effect that is a consequence of its layered structure.
In fact, empirically, it is found that neither of the above extremes is quite correct. The choice of metal does have some effect, and there appears to be a weak correlation between the metal work function and the barrier height, however the influence of the work function is only a fraction of that predicted by the Schottky-Mott rule. [6]: 143
A carbon nanotube field-effect transistor (CNTFET) is a field-effect transistor that utilizes a single carbon nanotube (CNT) or an array of carbon nanotubes as the channel material, instead of bulk silicon, as in the traditional MOSFET structure. There have been major developments since CNTFETs were first demonstrated in 1998.
In late 1967, Tom Klein, working at the Fairchild Semiconductor R&D Labs, and reporting to Les Vadasz, realized that the work function difference between heavily P-type doped silicon and N-type silicon was 1.1 volt lower than the work function difference between aluminum and the same N-type silicon. This meant that the threshold voltage of MOS ...