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The time to read the first bit of memory from a DRAM without an active row is T RCD + CL. Row Precharge Time T RP: The minimum number of clock cycles required between issuing the precharge command and opening the next row. The time to read the first bit of memory from a DRAM with the wrong row open is T RP + T RCD + CL. Row Active Time T RAS
Memory refresh is a process of periodically reading information from an area of computer memory and immediately rewriting the read information to the same area without modification, for the purpose of preserving the information. [ 1] Memory refresh is a background maintenance process required during the operation of semiconductor dynamic random ...
PC100 is a standard for internal removable computer random-access memory, defined by the JEDEC. PC100 refers to Synchronous DRAM operating at a clock frequency of 100 MHz, on a 64-bit-wide bus, at a voltage of 3.3 V. PC100 is available in 168-pin DIMM and 144-pin SO-DIMM form factors. PC100 is backward compatible with PC66 and was superseded by ...
The time to read additional bits from an open page is much less, defined by the /CAS to /CAS cycle time. The quoted number is the clearest way to compare between the performance of different DRAM memories, as it sets the slower limit regardless of the row length or page size.
Early core memory systems had cycle times of about 6 μs, which had fallen to 1.2 μs by the early 1970s, and by the mid-70s it was down to 600 ns (0.6 μs). Some designs had substantially higher performance: the CDC 6600 had a memory cycle time of 1.0 μs in 1964, using cores that required a half-select current of 200 mA. [43]
Approximate number system. Parallel individuation system. v. t. e. Overview of the forms and functions of memory. Memory is the faculty of the mind by which data or information is encoded, stored, and retrieved when needed. It is the retention of information over time for the purpose of influencing future action. [ 1]
CAS latency. Column address strobe latency, also called CAS latency or CL, is the delay in clock cycles between the READ command and the moment data is available. [ 1][ 2] In asynchronous DRAM, the interval is specified in nanoseconds (absolute time). [ 3] In synchronous DRAM, the interval is specified in clock cycles.
In development. Historical. v. t. e. Non-volatile memory ( NVM) or non-volatile storage is a type of computer memory that can retain stored information even after power is removed. In contrast, volatile memory needs constant power in order to retain data. Non-volatile memory typically refers to storage in semiconductor memory chips, which store ...