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Indium gallium nitride (InGaN, In x Ga 1−x N) is a semiconductor material made of a mix of gallium nitride (GaN) and indium nitride (InN). It is a ternary group III/group V direct bandgap semiconductor. Its bandgap can be tuned by varying the amount of indium in the alloy.
Aluminium gallium indium phosphide (Al Ga In P, also AlInGaP, InGaAlP, etc.) is a semiconductor material that provides a platform for the development of multi-junction photovoltaics and optoelectronic devices. It has a direct bandgap ranging from ultraviolet to infrared photon energies. [1]
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The materials used for the LED have a direct band gap with energies corresponding to near-infrared, visible, or near-ultraviolet light. LED development began with infrared and red devices made with gallium arsenide. Advances in materials science have enabled making devices with ever-shorter wavelengths, emitting light in a variety of colors.
Aluminium gallium arsenide (also gallium aluminium arsenide) (Al x Ga 1−x As) is a semiconductor material with very nearly the same lattice constant as GaAs, but a larger bandgap. The x in the formula above is a number between 0 and 1 - this indicates an arbitrary alloy between GaAs and AlAs .
An infrared detector is a detector that reacts to infrared (IR) radiation. The two main types of detectors are thermal and photonic ( photodetectors ). The thermal effects of the incident IR radiation can be followed through many temperature dependent phenomena. [ 2 ]
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Applied Materials then announced a planned merger with Tokyo Electron on September 24, 2013. [19] If it had been approved by government regulators, the proposed combined company, to be called Eteris, [ 20 ] would have been the world's largest supplier of semiconductor processing equipment, with a total market value of $29 billion. [ 21 ]