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The following is a list of CMOS 4000-series digital logic integrated circuits.In 1968, the original 4000-series was introduced by RCA.Although more recent parts are considerably faster, the 4000 devices operate over a wide power supply range (3V to 18V recommended range for "B" series) and are well suited to unregulated battery powered applications and interfacing with sensitive analogue ...
The 4000 series was introduced as the CD4000 COS/MOS series in 1968 by RCA [1] as a lower power and more versatile alternative to the 7400 series of transistor-transistor logic (TTL) chips. The logic functions were implemented with the newly introduced Complementary Metal–Oxide–Semiconductor (CMOS) technology.
A typical use of these transistors is as a switch for moderate voltages and currents, including as drivers for small lamps, motors, and relays. [1] In switching circuits, these FETs can be used much like bipolar junction transistors, but have some advantages: high input impedance of the insulated gate means almost no gate current is required
7400 series parts were constructed using bipolar junction transistors (BJT), forming what is referred to as transistor–transistor logic or TTL. Newer series, more or less compatible in function and logic level with the original parts, use CMOS technology or a combination of the two ( BiCMOS ).
MOSFET, showing gate (G), body (B), source (S), and drain (D) terminals. The gate is separated from the body by an insulating layer (pink).. The MOSFET (metal–oxide–semiconductor field-effect transistor) [1] is a type of insulated-gate field-effect transistor (IGFET) that is fabricated by the controlled oxidation of a semiconductor, typically silicon.
HCMOS ("high-speed CMOS") is the set of specifications for electrical ratings and characteristics, forming the 74HC00 family, a part of the 7400 series of integrated circuits. [ 1 ] The 74HC00 family followed, and improved upon, the 74C00 series (which provided an alternative CMOS logic family to the 4000 series but retained the part number ...
CMOS inverter (a NOT logic gate). Complementary metal–oxide–semiconductor (CMOS, / ˈ s iː m ɒ s /, also US: /-ɔː s / [1]) is a type of metal–oxide–semiconductor field-effect transistor (MOSFET) fabrication process that uses complementary and symmetrical pairs of p-type and n-type MOSFETs for logic functions. [2]
The 65 nm process is an advanced lithographic node used in volume CMOS semiconductor fabrication. Printed linewidths (i.e. transistor gate lengths) can reach as low as 25 nm on a nominally 65 nm process, while the pitch between two lines may be greater than 130 nm. [1]
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