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The 2N3904 is a common NPN bipolar junction transistor used for general-purpose low-power amplifying or switching applications. [1] [2] [3] It is designed for low current and power, medium voltage, and can operate at moderately high speeds. It is complementary to the 2N3906 PNP transistor. Both types were registered by Motorola Semiconductor in ...
Transistors (devices that enable current switching) also make use of extrinsic semiconductors. Bipolar junction transistors (BJT), which amplify current, are one type of transistor. The most common BJTs are NPN and PNP type. NPN transistors have two layers of n-type semiconductors sandwiching a p-type semiconductor.
The 2N3906 is a commonly used PNP bipolar junction transistor intended for general purpose low-power amplifying or switching applications. [1] [2] It is designed for low electric current and power and medium voltage, and can operate at moderately high speeds. It is complementary to the 2N3904 NPN transistor. [3]
BC108 family transistors from various manufacturers (ITT, CEMI, ATES, Siemens) The BC107 , BC108 and BC109 are general-purpose low power silicon NPN bipolar junction transistors found very often in equipment and electronics books/articles from Europe, Australia [ 1 ] and many other countries from the 1960s.
A TIP31 an NPN bipolar transistor and TIP32 is the complementary PNP transistor. TIP31 transistors are designated as TIP31A, TIP31B, TIP31 to indicate increasing collector-base and collector-emitter breakdown voltage ratings. The TIP31 is packaged in a TO-220 case.
Simplified cross section of a planar NPN bipolar junction transistor. BJTs consists of three differently doped semiconductor regions: the emitter region, the base region and the collector region. These regions are, respectively, p type, n type and p type in a PNP transistor, and n type, p type and n type in an NPN transistor.
The expressions are derived for a PNP transistor. For an NPN transistor, n has to be replaced by p, and p has to be replaced by n in all expressions below. The following assumptions are involved when deriving ideal current-voltage characteristics of the BJT [7] Low level injection; Uniform doping in each region with abrupt junctions
[8] [11] [12] In 1957 Frosch and Derick published their work on building the first silicon dioxide transistors, including a NPNP transistor, the same structure as the IGBT. [13] The basic IGBT mode of operation, where a pnp transistor is driven by a MOSFET, was first proposed by K. Yamagami and Y. Akagiri of Mitsubishi Electric in the Japanese ...