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DDR SDRAM specification was finalized by JEDEC in June 2000 (JESD79). [9] JEDEC has set standards for the data rates of DDR SDRAM, divided into two parts. The first specification is for memory chips, and the second is for memory modules. The first retail PC motherboard using DDR SDRAM was released in August 2000. [10]
As a result, DDR SDRAM is not backwards compatible with SDR SDRAM. DDR SDRAM (sometimes called DDR1 for greater clarity) doubles the minimum read or write unit; every access refers to at least two consecutive words. Typical DDR SDRAM clock rates are 133, 166 and 200 MHz (7.5, 6, and 5 ns/cycle), generally described as DDR-266, DDR-333 and DDR ...
Double data rate SDRAM (DDR SDRAM or DDR) was a later development of SDRAM, used in PC memory beginning in 2000. Subsequent versions are numbered sequentially (DDR2, DDR3, etc.). DDR SDRAM internally performs double-width accesses at the clock rate, and uses a double data rate interface to transfer one half on each clock edge. DDR2 and DDR3 ...
The notch on DDR2 DIMMs is in a different position from DDR DIMMs, and the pin density is higher than DDR DIMMs in desktops. DDR2 is a 240-pin module, DDR is a 184-pin module. Notebooks have 200-pin SO-DIMMs for DDR and DDR2; however, the notch on DDR2 modules is in a slightly different position than on DDR modules.
Double Data Rate 4 Synchronous Dynamic Random-Access Memory (DDR4 SDRAM) is a type of synchronous dynamic random-access memory with a high bandwidth ("double data rate") interface. Released to the market in 2014, [ 2 ] [ 3 ] [ 4 ] it is a variant of dynamic random-access memory (DRAM), some of which have been in use since the early 1970s, [ 5 ...
GDDR SDRAM is distinct from the more widely known types of DDR SDRAM, such as DDR4 and DDR5, although they share some of the same features—including double data rate (DDR) data transfers. As of 2023, GDDR SDRAM has been succeeded by GDDR2, GDDR3, GDDR4, GDDR5, GDDR5X, GDDR6, GDDR6X and GDDR6W.
Double Data Rate 3 Synchronous Dynamic Random-Access Memory (DDR3 SDRAM) is a type of synchronous dynamic random-access memory (SDRAM) with a high bandwidth ("double data rate") interface, and has been in use since 2007. It is the higher-speed successor to DDR and DDR2 and predecessor to DDR4 synchronous dynamic random-access memory (SDRAM) chips.
The timing of modern synchronous dynamic random-access memory (SDRAM) is commonly indicated using four parameters: CL, T RCD, T RP, and T RAS in units of clock cycles; they are commonly written as four numbers separated with hyphens, e.g. 7-8-8-24.
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