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Static random-access memory (static RAM or SRAM) is a type of random-access memory (RAM) that uses latching circuitry (flip-flop) to store each bit. SRAM is volatile memory; data is lost when power is removed. The static qualifier differentiates SRAM from dynamic random-access memory (DRAM):
In SRAM, the memory cell is a type of flip-flop circuit, usually implemented using FETs. This means that SRAM requires very low power when not being accessed, but it is expensive and has low storage density. A second type, DRAM, is based around a capacitor. Charging and discharging this capacitor can store a "1" or a "0" in the cell.
The Miniature Card is 37 × 45 × 3.5 mm thick and can have devices on both sides of the substrate. Its 60-pin connector was a memory-only subset of PCMCIA and featured 16-bit data and 24-bit address bus with 3.3 or 5-volt signaling. Miniature Cards support Attribute Information Structure (AIS) in the I²C identification EEPROM.
The two main types of volatile RAM are static random-access memory (SRAM) and dynamic random-access memory (DRAM). Bipolar SRAM was invented by Robert Norman at Fairchild Semiconductor in 1963, [9] followed by the development of MOS SRAM by John Schmidt at Fairchild in 1964. [15]
Static random-access memory, a type of semiconductor memory that uses bistable latching circuitry to store each bit; Shadow Random Access Memory, for faster ROM chip access; Short-range attack missile. AGM-69 SRAM, a Boeing nuclear air-to-surface missile AGM-131 SRAM II, a nuclear air-to-surface missile intended as a replacement; Other uses
CMOS memory was commercialized by RCA, which launched a 288-bit CMOS SRAM memory chip in 1968. [23] CMOS memory was initially slower than NMOS memory, which was more widely used by computers in the 1970s. [24] In 1978, Hitachi introduced the twin-well CMOS process, with its HM6147 (4 kb SRAM) memory chip, manufactured with a 3 μm process. The ...
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