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Gallium arsenide (GaAs) is a III-V direct band gap semiconductor with a zinc blende crystal structure.. Gallium arsenide is used in the manufacture of devices such as microwave frequency integrated circuits, monolithic microwave integrated circuits, infrared light-emitting diodes, laser diodes, solar cells and optical windows.
Gallium arsenide (GaAs) is also widely used in high-speed devices but so far, it has been difficult to form large-diameter boules of this material, limiting the wafer diameter to sizes significantly smaller than silicon wafers thus making mass production of GaAs devices significantly more expensive than silicon. Gallium Nitride (GaN) is gaining ...
A compound semiconductor is a semiconductor compound composed of chemical elements of at least two different species. These semiconductors form for example in periodic table groups 13–15 (old groups III–V), for example of elements from the Boron group (old group III, boron, aluminium, gallium, indium) and from group 15 (old group V, nitrogen, phosphorus, arsenic, antimony, bismuth).
Where two differently-doped regions exist in the same crystal, a semiconductor junction is created. The development of these junctions is the basis of diodes, transistors and all modern electronics. Examples of semiconductors are silicon, germanium, gallium arsenide. After silicon, gallium arsenide is the second most common semiconductor. [3]
Wide-bandgap semiconductors permit devices to operate at much higher voltages, frequencies, and temperatures than conventional semiconductor materials like silicon and gallium arsenide. They are the key component used to make short-wavelength (green-UV) LEDs or lasers , and are also used in certain radio frequency applications, notably military ...
As indirect band gap materials the electrons dissipate energy in the form of heat within the crystalline silicon and germanium diodes, but in gallium arsenide phosphide (GaAsP) and gallium phosphide (GaP) semiconductors, the electrons dissipate energy by emitting photons. If the semiconductor is translucent, the junction becomes the source of ...
The invention of the high-electron-mobility transistor (HEMT) is usually attributed to physicist Takashi Mimura (三村 高志), while working at Fujitsu in Japan. [4] The basis for the HEMT was the GaAs (gallium arsenide) MOSFET (metal–oxide–semiconductor field-effect transistor), which Mimura had been researching as an alternative to the standard silicon (Si) MOSFET since 1977.
In almost all inorganic semiconductors, such as silicon, gallium arsenide, etc., there is very little interaction between electrons and holes (very small exciton binding energy), and therefore the optical and electronic bandgap are essentially identical, and the distinction between them is ignored.