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The procedural steps of the direct bonding process of wafers any surface is divided into wafer preprocessing, pre-bonding at room temperature and; annealing at elevated temperatures. Even though direct bonding as a wafer bonding technique is able to process nearly all materials, silicon is the most established material up to now. Therefore, the ...
Wafer bonding is a packaging technology on wafer-level for the fabrication of microelectromechanical systems (MEMS), nanoelectromechanical systems (NEMS), microelectronics and optoelectronics, ensuring a mechanically stable and hermetically sealed encapsulation. The wafers' diameter range from 100 mm to 200 mm (4 inch to 8 inch) for MEMS/NEMS ...
Adhesive bonding has the advantage of relatively low bonding temperature as well as the absence of electric voltage and current. Because the wafers are not in direct contact, this procedure enables the use of different substrates, such as silicon, glass, metals or other semiconductor materials.
Surface activated bonding (SAB) is a non-high-temperature wafer bonding technology with atomically clean and activated surfaces. Surface activation prior to bonding by using fast atom bombardment is typically employed to clean the surfaces. High-strength bonding of semiconductors, metals, and dielectrics can be obtained even at room temperature ...
Plasma-activated bonding is a derivative, directed to lower processing temperatures for direct bonding with hydrophilic surfaces. The main requirements for lowering temperatures of direct bonding are the use of materials melting at low temperatures and with different coefficients of thermal expansion (CTE) .
The wafer bond characterization is based on different methods and tests. Considered a high importance of the wafer are the successful bonded wafers without flaws. Those flaws can be caused by void formation in the interface due to unevenness or impurities. The bond connection is characterized for wafer bond development or quality assessment of ...
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Wafer bonding is a packaging technology for materials integration as well as for hermetic sealing and encapsulation. This method describes the process for all suitable bonding techniques that enable the contacting of two or more wafers.
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