Search results
Results from the WOW.Com Content Network
Wafer bonding is a packaging technology on wafer-level for the fabrication of microelectromechanical systems (MEMS), nanoelectromechanical systems (NEMS), microelectronics and optoelectronics, ensuring a mechanically stable and hermetically sealed encapsulation. The wafers' diameter range from 100 mm to 200 mm (4 inch to 8 inch) for MEMS/NEMS ...
The wafers can be cleaned using H 2 O 2 + H 2 SO 4 or oxygen plasma. The cleaned wafers are rinsed with DI water and dried at elevated temperature, e.g. 100 to 200 °C for 120 min. [17] The adhesion promoter with a specific thickness is deposited, i.e. spin-coated or contact printed on the wafer to improve the bonding strength.
The procedural steps of the direct bonding process of wafers any surface is divided into wafer preprocessing, pre-bonding at room temperature and; annealing at elevated temperatures. Even though direct bonding as a wafer bonding technique is able to process nearly all materials, silicon is the most established material up to now. Therefore, the ...
Wafer bonding is a packaging technology for materials integration as well as for hermetic sealing and encapsulation. This method describes the process for all ...
Eutectic bonding, also referred to as eutectic soldering, describes a wafer bonding technique with an intermediate metal layer that can produce a eutectic system. Those eutectic metals are alloys that transform directly from solid to liquid state, or vice versa from liquid to solid state, at a specific composition and temperature without ...
The wafer bond characterization is based on different methods and tests. Considered a high importance of the wafer are the successful bonded wafers without flaws. Those flaws can be caused by void formation in the interface due to unevenness or impurities. The bond connection is characterized for wafer bond development or quality assessment of ...
There are several methods for 3D IC design, including recrystallization and wafer bonding methods. There are two major types of wafer bonding, Cu-Cu connections (copper-to-copper connections between stacked ICs, used in TSVs) [18] [19] and through-silicon via (TSV). 3D ICs with TSVs may use solder microbumps, small solder balls as an interface between two individual dies in a 3D IC. [20]
Anodic bonding is commonly used to seal glass to silicon wafers in electronics and microfluidics. Anodic bonding, also known as field assisted bonding or electrostatic sealing, [1] is mostly used for connecting silicon/glass and metal/glass through electric fields. The requirements for anodic bonding are clean and even wafer surfaces and atomic ...