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For this reason, later BIOS implementations may use a small portion of BIOS flash ROM as NVRAM, to store setup data. [7] Today's UEFI motherboards use NVRAM to store configuration data (NVRAM is a portion of the UEFI flash ROM), but by many OEMs' design, the UEFI settings are still lost if the CMOS battery fails. [8] [9]
The Extended System Configuration Data (ESCD) is a specification for configuring x86 computers of the ISA PNP era. The specification was developed by Compaq, Intel and Phoenix Technologies. It consists of a method for storing configuration information in nonvolatile BIOS memory and three BIOS functions for working with that data. [1] [2]
The first EEPROM that used Fowler-Nordheim tunnelling to erase data was invented by Bernward and patented by Siemens in 1974. [24] In February 1977, Israeli-American Eliyahou Harari at Hughes Aircraft Company patented in the US a modern EEPROM technology, based on Fowler-Nordheim tunnelling through a thin silicon dioxide layer between the floating-gate and the wafer.
To retrieve data from the EPROM, the address represented by the values at the address pins of the EPROM is decoded and used to connect one word (usually an 8-bit byte) of storage to the output buffer amplifiers. Each bit of the word is a 1 or 0, depending on the storage transistor being switched on or off, conducting or non-conducting.
The data input should be held steady throughout this time period. [28] Recovery time is the minimum amount of time the asynchronous set or reset input should be inactive before the clock event, so that the data is reliably sampled by the clock. The recovery time for the asynchronous set or reset input is thereby similar to the setup time for ...
CMOS inverter (a NOT logic gate). Complementary metal–oxide–semiconductor (CMOS, pronounced "sea-moss ", / s iː m ɑː s /, /-ɒ s /) is a type of metal–oxide–semiconductor field-effect transistor (MOSFET) fabrication process that uses complementary and symmetrical pairs of p-type and n-type MOSFETs for logic functions. [1]
Non-volatile random-access memory (NVRAM) is random-access memory that retains data without applied power. This is in contrast to dynamic random-access memory (DRAM) and static random-access memory (SRAM), which both maintain data only for as long as power is applied, or forms of sequential-access memory such as magnetic tape, which cannot be randomly accessed but which retains data ...
The programming process is set one or more cells from 1 to 0. Any cells that have been set to 0 by programming can only be reset to 1 by erasing the entire block. This means that before new data can be programmed into a page that already contains data, the current contents of the page plus the new data must be copied to a new, erased page.