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This makes trench capacitors suitable for constructing embedded DRAM (eDRAM) (Jacob, p. 357). Disadvantages of trench capacitors are difficulties in reliably constructing the capacitor's structures within deep holes and in connecting the capacitor to the access transistor's drain terminal (Kenner, p. 44).
The two most common types of DRAM memory cells since the 1980s have been trench-capacitor cells and stacked-capacitor cells. [25] Trench-capacitor cells are where holes (trenches) are made in a silicon substrate, whose side walls are used as a memory cell, whereas stacked-capacitor cells are the earliest form of three-dimensional memory (3D ...
in DRAM memory circuits, capacitor trenches may be 10–20 μm deep, in MEMS, DRIE is used for anything from a few micrometers to 0.5 mm. in irregular chip dicing, DRIE is used with a novel hybrid soft/hard mask to achieve sub-millimeter etching to dice silicon dies into lego-like pieces with irregular shapes. [7] [8] [9]
The two main types of random-access memory (RAM) are static RAM (SRAM), which uses several transistors per memory cell, and dynamic RAM (DRAM), which uses a transistor and a MOS capacitor per cell. Non-volatile memory (such as EPROM, EEPROM and flash memory) uses floating-gate memory cells, which consist of a single floating-gate transistor per ...
Capacitors used for suppressing undesirable frequencies are sometimes called filter capacitors. They are common in electrical and electronic equipment, and cover a number of applications, such as: Glitch removal on direct current (DC) power rails; Radio frequency interference (RFI) removal for signal or power lines entering or leaving equipment
A capacitor is a passive device on a circuit board that stores electrical energy in an electric field by virtue of accumulating electric charges on two close surfaces insulated from each other. This is a list of known capacitor manufacturers, their headquarters country of origin, and year founded. The oldest capacitor companies were founded ...
Ferroelectric RAM Magnetoresistive random-access memory nvSRAM BBSRAM Technique The basic storage element is a ferroelectric capacitor. The capacitor can be polarized up or down by applying an electric field [18] Similar to ferroelectric RAM, but the atoms align themselves in the direction of an external magnetic force. This effect is used to ...
Ferroelectric RAM (FeRAM, F-RAM or FRAM) is a form of random-access memory similar in construction to DRAM, both use a capacitor and transistor but instead of using a simple dielectric layer the capacitor, an F-RAM cell contains a thin ferroelectric film of lead zirconate titanate [Pb(Zr,Ti)O 3], commonly referred to as PZT. The Zr/Ti atoms in ...
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