Search results
Results from the WOW.Com Content Network
The 2N7000 has been referred to as a "FETlington" and as an "absolutely ideal hacker part." [3] The word "FETlington" is a reference to the Darlington-transistor-like saturation characteristic.
The 2N3055 is a silicon NPN power transistor intended for general purpose applications. It was introduced in the early 1960s by RCA using a hometaxial power transistor process, transitioned to an epitaxial base in the mid-1970s. [1] Its numbering follows the JEDEC standard. [2] It is a transistor type of enduring popularity. [3] [4] [5]
SOT: Small-outline transistor (also SOT-23, SOT-223, SOT-323). TO-XX: wide range of small pin count packages often used for discrete parts like transistors or diodes. TO-3: Panel-mount with leads; TO-5: Metal can package with radial leads; TO-18: Metal can package with radial leads; TO-39; TO-46; TO-66: Similar shape to the TO-3 but smaller
Several variants of the original TO-5 package have the same cap dimensions but differ in the number and length of the leads (wires). Somewhat incorrectly, TO-5 and TO-39 are often used in manufacturer's literature as synonyms for any package with the cap dimensions of TO-5, regardless of the number of leads, or even for any package with the diameter of TO-5, regardless of the cap height and ...
The "TO" designation stands for "transistor outline". [2] TO-220 packages have three leads. Similar packages with two, four, five or seven leads are also manufactured. A notable characteristic is a metal tab with a hole, used to mount the case to a heatsink, [3] allowing the component to dissipate more heat than one constructed in a TO-92 case.
The 2N2222 is considered a very common transistor, [1] [2] [3] and is used as an exemplar of an NPN transistor. It is frequently used as a small-signal transistor, [4] [5] and it remains a small general purpose transistor [6] of enduring popularity. [7] [8] [9] The 2N2222 was part of a family of devices described by Motorola at a 1962 IRE ...
3D model of a TO-92 package, commonly used for small bipolar transistors. A bipolar junction transistor (BJT) is a type of transistor that uses both electrons and electron holes as charge carriers. In contrast, a unipolar transistor, such as a field-effect transistor (FET), uses only one kind of charge carrier.
The SOA specification combines the various limitations of the device — maximum voltage, current, power, junction temperature, secondary breakdown — into one curve, allowing simplified design of protection circuitry. Illustration of safe operating area of a bipolar power transistor.