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Compared to DDR2 memory, DDR3 memory uses less power. Some manufacturers further propose using "dual-gate" transistors to reduce leakage of current. [10]According to JEDEC, [11]: 111 1.575 volts should be considered the absolute maximum when memory stability is the foremost consideration, such as in servers or other mission-critical devices.
The naming convention for DDR, DDR2 and DDR3 modules specifies either a maximum speed (e.g., DDR2-800) or a maximum bandwidth (e.g., PC2-6400). The speed rating (800) is not the maximum clock speed, but twice that (because of the doubled data rate). The specified bandwidth (6400) is the maximum megabytes transferred per second using a 64-bit width.
FPM, EDO, SDR, and RDRAM memory was not commonly installed in a dual-channel configuration. DDR and DDR2 memory is usually installed in single- or dual-channel configuration. DDR3 memory is installed in single-, dual-, tri-, and quad-channel configurations. Bit rates of multi-channel configurations are the product of the module bit-rate (given ...
The term rank was created and defined by JEDEC, the memory industry standards group. On a DDR, DDR2, or DDR3 memory module, each rank has a 64-bit-wide data bus (72 bits wide on DIMMs that support ECC). The number of physical DRAMs depends on their individual widths.
For example, DDR3-2000 memory has a 1000 MHz clock frequency, which yields a 1 ns clock cycle. With this 1 ns clock, a CAS latency of 7 gives an absolute CAS latency of 7 ns. Faster DDR3-2666 memory (with a 1333 MHz clock, or 0.75 ns exactly; the 1333 is rounded) may have a larger CAS latency of 9, but at a clock frequency of 1333 MHz the ...
Two memory channels for communication with DDR3 SDRAM. The clock speed of the memory that is supported will depend on the processor. The LGA 1366 platform reached EOL on June 29, 2012. LGA 1156 reached EOL on December 7, 2012. [4]
The DDR4 SDRAM is a high-speed dynamic random-access memory internally configured as 16 banks, 4 bank groups with 4 banks for each bank group for ×4/×8 and 8 banks, 2 bank groups with 4 banks for each bank group for ×16 DRAM. The DDR4 SDRAM uses an 8n prefetch architecture to achieve high-speed
The JEDEC DDR3 SDRAM standard JESD-79-3f uses Mb and Gb to specify binary memory capacity: [7] "The purpose of this Standard is to define the minimum set of requirements for JEDEC compliant 512 Mb through 8 Gb for x4, x8, and x16 DDR3 SDRAM devices."
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