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For example, V GS(off) for the Temic J202 device varies from −0.8 V to −4 V. [12] Typical values vary from −0.3 V to −10 V. (Confusingly, the term pinch-off voltage is also used to refer to the V DS value that separates the linear and saturation regions. [10] [11]) To switch off an n-channel device requires a negative gate–source ...
Pinch-off voltage may refer to one of two different characteristics of a transistor: . in insulated-gate field-effect transistors (IGFET), "pinch-off" refers to the channel pinching that leads to current saturation behaviour under high source–drain bias.
When referring to a junction field-effect transistor (JFET), the threshold voltage is often called pinch-off voltage instead. [ 1 ] [ 2 ] This is somewhat confusing since pinch off applied to insulated-gate field-effect transistor (IGFET) refers to the channel pinching that leads to current saturation behavior under high source–drain bias ...
It also causes distortion in JFET amplifiers. [1] To understand the effect, first the notion of pinch-off of the channel is introduced. The channel is formed by attraction of carriers to the gate, and the current drawn through the channel is nearly a constant independent of drain voltage in saturation mode.
The first FET device to be successfully built was the junction field-effect transistor (JFET). [2] A JFET was first patented by Heinrich Welker in 1945. [4] The static induction transistor (SIT), a type of JFET with a short channel, was invented by Japanese engineers Jun-ichi Nishizawa and Y. Watanabe in 1950.
The mode can be determined by the sign of the threshold voltage (gate voltage relative to source voltage at the point where an inversion layer just forms in the channel): for an N-type FET, enhancement-mode devices have positive thresholds, and depletion-mode devices have negative thresholds; for a P-type FET, enhancement-mode have negative ...
Complementary JFET duals are also noted for their low equivalent noise voltage, high operating voltage, thermal tracking characteristics, low offset voltage, low pinch-off voltages, low input bias currents, and very high input impedance. All of these characteristics make these devices ideal for use in high performance audio, sensor and ...
So much so, that JFET devices are packaged and sold as voltage-controlled resistors. [21] Typically, JFETs when they are packaged as VCRs often have high pinch-off voltages, which result in a greater dynamic resistance range. JFETs for VCRs are often packaged in pairs, which allows VCR designs that require matched transistor parameters.